Power MOSFET
PD - 97612A
AUTOMOTIVE GRADE
Features
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Advanced Process Technology Ultra Low On-Resistance 175°C Operat...
Description
PD - 97612A
AUTOMOTIVE GRADE
Features
l l l l l
l l
Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified *
HEXFET® Power MOSFET
D
AUIRFZ48Z AUIRFZ48ZS
55V 11mΩ 61A
V(BR)DSS RDS(on) max. ID
G S
Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
D D
G
D
S G
D
S
TO-220AB AUIRFZ48Z
D2Pak AUIRFZ48ZS
G Gate
D Drain
S Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
ID @ TC = 25...
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