NE3505M04

DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISITOR NE3505M04 L to C BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER N-CHANNEL HJ-FET FEATURES - Super Low Noise Figure & Associated Gain : NF=0.4dB TYP. Ga=15.5dB TYP. @f=4GHz NF=0.35dB TYP. Ga=17dB TYP. @f=2.4GHz (Reference Only) NF=0.45dB TYP. Ga=14dB TYP. @f=5.8GHz (Reference Only) - Flat-lead 4-pin tin-type super mini-mold(M04) package APPLICATIONS - Satellite Radio(SDARS, DMB, etc.) antenna LNA - 5.8GHz-band WLAN LNA - LNA for Micro-wave communication system ORDERING INFORMATION PART NUMBER NE3505M04 NE3505M04-T2 Quantity 50pcs (Non reel) 3 Kpcs/reel V76 Marking Packaging Style 8 mm wide emboss taping 1pin(source), 2pin(Drain) feed hole direction Remark To order evaluation samples, please contact your local NEC sales office. Part number for sample order: NE3505M04 ABSOLUTE MAXIMUM RATINGS ( TA =+ 25 °C ) PARAMETER Drain to Source Voltage Gate to Source Voltage Drain Current Gate Current Total Power Dissipation Channel Temperature Storage Temperature SYMBOL VDS VGS ID IG Ptot Tch Tstg RATINGS 4.0 -3.0 IDSS 140 125 +125 - 65 to +125 UNIT V V mA µA mW °C °C Caution : Observe precautions when handling because these devices are sensitive to electrostatic discharge. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and addi...