NX6342EP

A Business Partner of Renesas Electronics Corporation. Preliminary NX6342EP LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s BASE-LR/LW APPLICATION DESCRIPTION The NX6342EP is a 1 310 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD. Data Sheet R08DS0050EJ0100 Rev.1.00 Jan 19, 2012 APPLICATIONS 10 Gb/s BASE-LR/LW (IEEE802.3ae) FEATURES Optical output power Low threshold current Differential efficiency Wide operating temperature range InGaAs monitor PIN-PD CAN package Focal point PO = 8.5 mW Ith = 8 mA ηd = 0.23 W/A TC = −5 to +85°C φ 5.6 mm 6.0 mm R08DS0050EJ0100 Rev.1.00 Jan 19, 2012 Page 1 of 5 A Business Partner of Renesas Electronics Corporation. NX6342EP Chapter Title PACKAGE DIMENSIONS (UNIT: mm) (f 5.6) *2 (f 4.2) (f 3.55) *2 *2 1.0±0.1 BOTTOM VIEW 1 2 3 4 (0.3) 110°±2° *2 (0.3) *2 f 2.0 Focal Point D x = ±200 m m MAX. D y = ±200 m m MAX. *1 6.0±0.4 PIN CONNECTION 1 LD 2 Reference Plane 3 PD 4 15.0±1.0 1.2±0.1 3.87±0.3 (3.0) *2 4– f 0.45 f 2.0 *1 Focal Point: A point to get maximum optical output power from fiber. *2 ( ) indicates nominal dimension. R08DS0050EJ0100 Rev.1.00 Jan 19, 2012 Page 2 of 5 A Business Partner of Renesas Electronics Corporation. NX6342EP Chapter Title ORDERING INFORMATION Part Number NX6342EP$= Package 4-pin CAN with ball lens cap Pin Connections 1 LD 2 4 3 PD Remarks 1. The color of ball lens cap might be observed di...