Power MOSFET
IRF620S, SiHF620S
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Co...
Description
IRF620S, SiHF620S
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 14 3.0 7.9 Single
D
FEATURES
200 0.80
Halogen-free According to IEC 61249-2-21 Definition Surface Mount Available in Tape and Reel Dynamic dV/dt Rating Repetitive Avalanche Rated Fast Switching Simple Drive Requirements Ease of Paralleling Compliant to RoHS Directive 2002/95/EC
D2PAK
(TO-263)
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK (TO-263) is a surface mount power package capable of accommodating die size up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK (TO-263) is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application.
D2PAK (TO-263) SiHF620STRL-GE3a IRF620STRLPbFa SiHF620STL-E3a D2PAK (TO-263) SiHF620STRR-GE3a IRF620STRRPbFa SiHF620STR-E3a
G
G D S
S N-Channel MOSFET
ORDERING INFORMATION
Package Lead (Pb)-free and Halogen-free Lead (Pb)-free Note a. See device orientation. D2PAK (TO-263) SiHF620S-GE3 IRF620SPbF SiHF620S-E3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current ...
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