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IRF620S

Vishay Siliconix

Power MOSFET

IRF620S, SiHF620S Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Co...


Vishay Siliconix

IRF620S

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Description
IRF620S, SiHF620S Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 14 3.0 7.9 Single D FEATURES 200 0.80 Halogen-free According to IEC 61249-2-21 Definition Surface Mount Available in Tape and Reel Dynamic dV/dt Rating Repetitive Avalanche Rated Fast Switching Simple Drive Requirements Ease of Paralleling Compliant to RoHS Directive 2002/95/EC D2PAK (TO-263) DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK (TO-263) is a surface mount power package capable of accommodating die size up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK (TO-263) is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. D2PAK (TO-263) SiHF620STRL-GE3a IRF620STRLPbFa SiHF620STL-E3a D2PAK (TO-263) SiHF620STRR-GE3a IRF620STRRPbFa SiHF620STR-E3a G G D S S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free Lead (Pb)-free Note a. See device orientation. D2PAK (TO-263) SiHF620S-GE3 IRF620SPbF SiHF620S-E3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current ...




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