Document
SEMiX171KH16s
SEMiX® 1s
Rectifier Thyr./Diode Module SEMiX171KH16s
Features
• Terminal height 17 mm • Chips soldered directly to insulated
substrate
Typical Applications*
• Input Bridge Rectifier for AC/DC motor control
• Power supply
Absolute Maximum Ratings
Symbol Conditions
Chip IT(AV)
sinus 180°
ITRMS ITSM
10 ms
i2t 10 ms
VRSM VRRM VDRM (di/dt)cr (dv/dt)cr Tj
Module Tstg Visol
Tj = 130 °C Tj = 130 °C
AC sinus 50Hz
Tc = 85 °C Tc = 100 °C Tj = 25 °C Tj = 130 °C Tj = 25 °C Tj = 130 °C
1 min 1s
Characteristics
Symbol Conditions
Chip VT VT(TO) rT IDD;IRD tgd tgr tq IH IL VGT IGT VGD IGD Rth(j-c)
Rth(j-c)
Rth(j-c)
Tj = 25 °C, IT = 500 A Tj = 130 °C Tj = 130 °C
Tj = 130 °C, VDD = VDRM; VRD = VRRM
Tj = 25 °C, IG = 1 A, diG/dt = 1 A/µs
VD = 0.67 * VDRM
Tj = 130 °C
Tj = 25 °C
Tj = 25 °C, RG = 33 Ω
Tj = 25 °C, d.c.
Tj = 25 °C, d.c.
Tj = 130 °C, d.c.
Tj = 130 °C, d.c.
continuous DC
per thyristor per diode
sin. 180°
per thyristor per diode
rec. 120°
per thyristor per diode
Module Rth(c-s)
Ms Mt a w
per chip per module to heat sink (M5) to terminals (M6)
Values
170 125
5400 4800 145000 115000 1700 1600 1600 200 1000 -40 ... 130
-40 ... 125 4000 4800
Unit
A A A A A A²s A²s V V V A/µs V/µs °C
°C V V
min.
typ.
max. Unit
1.6
V
0.85
V
1.5
mΩ
60
mA
1
µs
2
µs
150
µs
150
400
mA
300
1000 mA
2
V
150
mA
0.25
V
10
mA
K/W
K/W
0.18 K/W
0.18 K/W
K/W
K/W
K/W
0.075
K/W
3
5
Nm
2.5
5
Nm
5 * 9,81 m/s²
145
g
KH
© by SEMIKRON
Rev. 3.0 – 13.08.2015
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SEMiX171KH16s
Fig. 1L: Power dissipation per thyristor/diode vs. on-state current
Fig. 1R: Power dissipation per thyristor/diode vs. ambient temperature
Fig. 2L: Power dissipation of one module vs. rms current
Fig. 2R: Power dissipation of one module vs. case temperature
Fig. 3L: Power dissipation of two modules vs. direct current
Fig. 3R: Power dissipation of two modules vs. case temperature
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Rev. 3.0 – 13.08.2015
© by SEMIKRON
SEMiX171KH16s
Fig. 4L: Power dissipation of three modules vs. direct current
Fig. 4R: Power dissipation of three modules vs. case temperature
Fig. 5: Recovered charge vs. current decrease
Fig. 6: Transient thermal impedance vs. time
Fig. 7: On-state characteristics
Fig. 8: Surge overload current vs. time
© by SEMIKRON
Rev. 3.0 – 13.08.2015
3
SEMiX171KH16s
Fig. 9: Gate trigger characteristics
spring configuration
SEMiX 1s
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff.
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Rev. 3.0 – 13.08.2015
© by SEMIKRON
.