DatasheetsPDF.com

SEMIX171KH16S Dataheets PDF



Part Number SEMIX171KH16S
Manufacturers Semikron International
Logo Semikron International
Description Rectifier Thyr/Diode
Datasheet SEMIX171KH16S DatasheetSEMIX171KH16S Datasheet (PDF)

SEMiX171KH16s SEMiX® 1s Rectifier Thyr./Diode Module SEMiX171KH16s Features • Terminal height 17 mm • Chips soldered directly to insulated substrate Typical Applications* • Input Bridge Rectifier for AC/DC motor control • Power supply Absolute Maximum Ratings Symbol Conditions Chip IT(AV) sinus 180° ITRMS ITSM 10 ms i2t 10 ms VRSM VRRM VDRM (di/dt)cr (dv/dt)cr Tj Module Tstg Visol Tj = 130 °C Tj = 130 °C AC sinus 50Hz Tc = 85 °C Tc = 100 °C Tj = 25 °C Tj = 130 °C Tj = 25 °C Tj = 130 °.

  SEMIX171KH16S   SEMIX171KH16S



Document
SEMiX171KH16s SEMiX® 1s Rectifier Thyr./Diode Module SEMiX171KH16s Features • Terminal height 17 mm • Chips soldered directly to insulated substrate Typical Applications* • Input Bridge Rectifier for AC/DC motor control • Power supply Absolute Maximum Ratings Symbol Conditions Chip IT(AV) sinus 180° ITRMS ITSM 10 ms i2t 10 ms VRSM VRRM VDRM (di/dt)cr (dv/dt)cr Tj Module Tstg Visol Tj = 130 °C Tj = 130 °C AC sinus 50Hz Tc = 85 °C Tc = 100 °C Tj = 25 °C Tj = 130 °C Tj = 25 °C Tj = 130 °C 1 min 1s Characteristics Symbol Conditions Chip VT VT(TO) rT IDD;IRD tgd tgr tq IH IL VGT IGT VGD IGD Rth(j-c) Rth(j-c) Rth(j-c) Tj = 25 °C, IT = 500 A Tj = 130 °C Tj = 130 °C Tj = 130 °C, VDD = VDRM; VRD = VRRM Tj = 25 °C, IG = 1 A, diG/dt = 1 A/µs VD = 0.67 * VDRM Tj = 130 °C Tj = 25 °C Tj = 25 °C, RG = 33 Ω Tj = 25 °C, d.c. Tj = 25 °C, d.c. Tj = 130 °C, d.c. Tj = 130 °C, d.c. continuous DC per thyristor per diode sin. 180° per thyristor per diode rec. 120° per thyristor per diode Module Rth(c-s) Ms Mt a w per chip per module to heat sink (M5) to terminals (M6) Values 170 125 5400 4800 145000 115000 1700 1600 1600 200 1000 -40 ... 130 -40 ... 125 4000 4800 Unit A A A A A A²s A²s V V V A/µs V/µs °C °C V V min. typ. max. Unit 1.6 V 0.85 V 1.5 mΩ 60 mA 1 µs 2 µs 150 µs 150 400 mA 300 1000 mA 2 V 150 mA 0.25 V 10 mA K/W K/W 0.18 K/W 0.18 K/W K/W K/W K/W 0.075 K/W 3 5 Nm 2.5 5 Nm 5 * 9,81 m/s² 145 g KH © by SEMIKRON Rev. 3.0 – 13.08.2015 1 SEMiX171KH16s Fig. 1L: Power dissipation per thyristor/diode vs. on-state current Fig. 1R: Power dissipation per thyristor/diode vs. ambient temperature Fig. 2L: Power dissipation of one module vs. rms current Fig. 2R: Power dissipation of one module vs. case temperature Fig. 3L: Power dissipation of two modules vs. direct current Fig. 3R: Power dissipation of two modules vs. case temperature 2 Rev. 3.0 – 13.08.2015 © by SEMIKRON SEMiX171KH16s Fig. 4L: Power dissipation of three modules vs. direct current Fig. 4R: Power dissipation of three modules vs. case temperature Fig. 5: Recovered charge vs. current decrease Fig. 6: Transient thermal impedance vs. time Fig. 7: On-state characteristics Fig. 8: Surge overload current vs. time © by SEMIKRON Rev. 3.0 – 13.08.2015 3 SEMiX171KH16s Fig. 9: Gate trigger characteristics spring configuration SEMiX 1s This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff. 4 Rev. 3.0 – 13.08.2015 © by SEMIKRON .


SEMIX302KD16S SEMIX171KH16S SEMIX302KH16S


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)