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SD6861 Dataheets PDF



Part Number SD6861
Manufacturers SILAN MICROELECTRONICS
Logo SILAN MICROELECTRONICS
Description CURRENT MODE PWM+PFM CONTROLLER
Datasheet SD6861 DatasheetSD6861 Datasheet (PDF)

SD686X CURRENT MODE PWM+PFM CONTROLLER WITH BUILT-IN HIGH VOLTAGE MOSFET DESCRIPTION SD686X is current mode PWM+PFM controller with built-in highvoltage MOSFET used for SWPS, with low standby power and low start current for power switch. In standby mode, the circuit enters burst mode to reduce the standby power dissipation. The switch frequency is 25~67KHz with jitter frequency for low EMI. Built-in peak current compensation circuit makes the limit output power stable even with different input A.

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SD686X CURRENT MODE PWM+PFM CONTROLLER WITH BUILT-IN HIGH VOLTAGE MOSFET DESCRIPTION SD686X is current mode PWM+PFM controller with built-in highvoltage MOSFET used for SWPS, with low standby power and low start current for power switch. In standby mode, the circuit enters burst mode to reduce the standby power dissipation. The switch frequency is 25~67KHz with jitter frequency for low EMI. Built-in peak current compensation circuit makes the limit output power stable even with different input AC voltage. Limit output power can be adjusted through the resistor. Maximum peak current compensation during power-on reduces pressure on transformer to avoid saturation, the peak current compensation will decrease for balance after power-on. It integrates various protections such as undervoltage lockout, overvoltage protection, overload protection, lead edge blanking, primary winding overcurrent protection and thermal shutdown. The circuit will restart until normal if protection occurs. DIP-8-300-2.54 APPLICATIONS * SWPS FEATURES * Energy Star 2.0 standard * Lower start-up current (3µA) * Various switching frequency following load for the higher efficiency * Frequency jitter for low EMI * Overvoltage, overcurrent, overload and over temperature protections. * Adjustable limit output power * Undervoltage lockout * Built-in high voltage MOSFET * Auto restart mode * Peak current compensation * Maximum peak current compensation for initialization * Burst mode * Cycle by cycle current limit HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://www.silan.com.cn REV:1.0 2010.03.12 Page 1 of 10 SD686X ORDERING INFORMATION Part No. SD6860 SD6861 SD6862 SD6863 SD6864 DIP-8-300-2.54 Package Marking SD6860 SD6861 SD6862 SD6863 SD6864 Material Pb free Pb free Pb free Pb free Pb free Package Type Tube Tube Tube Tube Tube TYPICAL OUPUT POWER CAPABILITY Part No. SD6860P65K67 SD6861P65K67 SD6862P65K67 SD6863P65K67 SD6864P65K67 190~265V Adapter 7W 10W 12W 14W 16W Open 9W 14W 17W 19W 21W Adapter 5W 8W 10W 12W 14W 85~265V Open 7.2W 12W 14W 15W 18W BLOCK DIAGRAM FB VCC + 14.8V 7.6V Reduced frequency control OSC DR Frequency jitter Internal Bias S Q R Control Driver Level shift Over voltage, over current, over load and over temperature protections COMP + Leading Edge Blanking Burst mode control Peak current compensation Limit output power adjust FB - ADJ GND HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://www.silan.com.cn REV:1.0 2010.03.12 Page 2 of 10 SD686X ABSOLUTE MAXIMUM RATING Characteristics Drain-Gate Voltage (RGS=1MΩ) Gate-Source (GND) Voltage SD6860 Drain Current Pulse note1 Symbol VDGR VGS Rating 650 ±30 4 6 Unit V V SD6861 SD6862 SD6863 SD6864 SD6860 IDM 8 11 14 1 1.5 A Continuous Drain Current (Tamb=25°C) SD6861 SD6862 SD6863 SD6864 SD6860 ID 2 3 4 15 30 A Signal Pulse Avalanche Energy note2 SD6861 SD6862 SD6863 SD6864 EAS 68 140 200 mJ Power Supply Voltage Feedback input voltage Limit output power voltage Total Power Dissipation Operating Junction Temperature Operating Temperature Storage Temperature 2. L=51mH, TJ=25°C(start)。 VCC,MAX VFB VADJ PD Darting TJ Tamb TSTG 28 -0.3~8 -0.3~8 1.5 0.017 +170 -25~+85 -55~+150 V V V W W/°C °C °C °C Note: 1. Pulse width is limited by maximum junction temperature; ELECTRICAL CHARACTERISTICS (for MOSFET, unless otherwise specified, Tamb=25°C) Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current SD6860 Static Drain-Source On Resistance SD6861 SD6862 SD6863 SD6864 RDS(ON) VGS=10V, ID=0.5A Symbol BVDSS IDSS Test conditions VGS=0V, ID=50µA VDS=650V, VGS=0V VDS=480V, VGS=0V Tamb=125°C Min. 650 -------Typ. ---14.0 8.0 5.0 4.0 3.0 Max. -50 200 16.8 9.6 6.0 4.8 3.6 Ω Unit V µA µA HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://www.silan.com.cn REV:1.0 2010.03.12 Page 3 of 10 SD686X Characteristics SD6860 SD6861 Input Capacitance SD6862 SD6863 SD6864 SD6860 SD6861 Output Capacitance SD6862 SD6863 SD6864 SD6860 Reverse Transfer Capacitance SD6861 SD6862 SD6863 SD6864 SD6860 SD6861 Turn On Delay Time SD6862 SD6863 SD6864 SD6860 SD6861 Rise Time SD6862 SD6863 SD6864 SD6860 SD6861 Turn Off Delay Time SD6862 SD6863 SD6864 SD6860 SD6861 Fall Time SD6862 SD6863 SD6864 TF VDD=0.5BVDSS, ID=25mA TD(OFF) VDD=0.5BVDSS, ID=25mA TR VDD=0.5BVDSS, ID=25mA TD(ON) VDD=0.5BVDSS, ID=25mA CRSS VGS=0V, VDS=25V, f=1MHz COSS VGS=0V, VDS=25V, f=1MHz CISS VGS=0V, VDS=25V, f=1MHz Symbol Test conditions Min. -----------------------------------Typ. 210 250 550 640 840 18 25 38 40 44 8 10 17 30 40 10 12 20 33 40 3 4 15 19 25 27 30 55 70 90 8 10 25 32 42 Max. -----------------------------------ns ns ns ns pF pF pF Unit ELECTRICAL CHARACTERISTICS (unless otherwise specified, VCC=12V, Tamb=25°C) Characteristics Undervoltage Section Start Threshold Voltage Stop Threshold Voltage VSTART VSTOP 14 6.6 14.8 7.6 16 8.6 V V Symbol Test conditions Min. Typ. Max. Unit HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://www.silan.com.cn REV:1.0 2010.03.12 Page 4 of 10 SD68.


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