SEMIX341D16S

SEMiX341D16s Absolute Maximum Ratings Symbol IFAV IFSM i2t Conditions Tc = 85 °C Tc = 100 °C Tj = 25 °C Tj = 130 °C Tj = 25 °C Tj = 130 °C Values 340 290 2500 2000 31250 20000 1700 1600 -40 ... 130 -40 ... 125 Unit A A A A A2s A2s V V °C °C V V Recitifier Diode sin. 180° 10 ms 10 ms SEMiX 13 ® VRSM VRRM Tj Module Bridge Rectifier Module (uncontrolled) SEMiX341D16s Tstg Visol AC sinus 50Hz 1 min 1s 4000 4800 Characteristics Features Terminal height 17 mm Chips soldered directly to isolated substrate Symbol Diode VF V(TO) rT IRD Rth(j-c) Rth(j-c) Module Rth(c-s) Ms Mt a w Conditions Tj = 25 °C, IF = 400 A Tj = 130 °C Tj = 130 °C Tj = 130 °C, VRD = VRRM per diode per diode min. typ. max. 1.75 0.9 2.7 4.5 Unit V V mΩ mA K/W K/W Typical Applications* Input Bridge Rectifier for AC/DC motor control power supply sin. 180 0.22 K/W K/W K/W per chip per module to heat sink (M5) to terminals (M6) 3 2.5 350 0.04 5 5 5 * 9,81 K/W Nm Nm m/s2 g D © by SEMIKRON Rev. 66 – 25.03.2010 1 SEMiX341D16s Fig. 4L: Power dissipation per module vs. direct current Fig. 4R: Power dissipation per module vs. case temperature Fig. 6: Transient thermal impedance vs. time Fig. 7: On-state characteristics Fig. 8: Surge overload current vs. time 2 Rev. 66 – 25.03.2010 © by SEMIKRON SEMiX341D16s spring configuration SEMiX 13 This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components ...