BUK9Y22-30B
N-channel TrenchMOS logic level FET
Rev. 04 — 7 April 2010 Product data sheet
1. Product profile
1.1 Genera...
BUK9Y22-30B
N-channel TrenchMOS logic level FET
Rev. 04 — 7 April 2010 Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect
Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
Low conduction losses due to low on-state resistance Q101 compliant Suitable for logic level gate drive sources Suitable for thermally demanding environments due to 175 °C rating
1.3 Applications
12 V loads Automotive systems General purpose power switching Motors, lamps and solenoids
1.4 Quick reference data
Table 1. Symbol VDS ID Ptot Quick reference data Parameter drain-source voltage drain current total power dissipation drain-source on-state resistance Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 5 V; Tmb = 25 °C; see Figure 1; see Figure 4 Tmb = 25 °C; see Figure 2 Min Typ Max Unit 30 V
37.7 A 59.4 W
Static characteristics RDSon VGS = 5 V; ID = 20 A; Tj = 25 °C; see Figure 12; see Figure 13 VGS = 10 V; ID = 20 A; Tj = 25 °C 17 22 mΩ
-
13.5 19
mΩ
NXP Semiconductors
BUK9Y22-30B
N-channel TrenchMOS logic level FET
Quick reference data …continued Parameter Conditions Min Typ Max Unit 47 mJ
Table 1. Symbol EDS(AL)S
Avalanche ruggedness non-repetitive ID = 37.7 A; Vsup ≤ 30 V; drain-source RGS = 50 Ω; VGS = 5 V; avalanche energy Tj(init) = 25 °C; unclamped gat...