Document
BUK761R4-30E
5 October 2012
N-channel TrenchMOS standard level FET
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.
1.2 Features and benefits • AEC Q101 compliant • Repetitive avalanche rated • Suitable for thermally demanding environments due to 175 °C rating • True standard level gate with VGS(th) rating of greater than 1V at 175 °C 1.3 Applications • 12 V Automotive systems • Electric and electro-hydraulic power steering • Motors, lamps and solenoid control • Start-Stop micro-hybrid applications • Transmission control • Ultra high performance power switching 1.4 Quick reference data
Table 1. Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; Fig. 1 Tmb = 25 °C; Fig. 2 VGS = 10 V; ID = 25 A; Tj = 25 °C; Fig. 11 VGS = 10 V; ID = 25 A; VDS = 24 V; Fig. 13; Fig. 14
[1] Continuous current is limited by package. [1]
Min -
Typ -
Max 30 120 324
Unit V A W
Static characteristics drain-source on-state resistance 1.23 1.45 mΩ
Dynamic characteristics QGD gate-drain charge 37 nC
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NXP Semiconductors
BUK761R4-30E
N-channel TrenchMOS standard level FET
2. Pinning information
Table 2. Pin 1 2 3 mb Pinning information Symbol Description G D S D gate drain source mounting base; connected to drain
2 1 3
G
mbb076
Simplified outline
mb
Graphic symbol
D
S
D2PAK (SOT404)
3. Ordering information
Table 3. Ordering information Package Name BUK761R4-30E D2PAK Description Version plastic single-ended surface-mounted package (D2PAK); 3 leads SOT404 (one lead cropped) Type number
4. Marking
Table 4. Marking codes Marking code BUK761R4-30E Type number BUK761R4-30E
5. Limiting values
Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VDGR VGS ID Parameter drain-source voltage drain-gate voltage gate-source voltage drain current Conditions Tj ≥ 25 °C; Tj ≤ 175 °C RGS = 20 kΩ Tj ≤ 175 °C; DC Tmb = 25 °C; VGS = 10 V; Fig. 1 Tmb = 100 °C; VGS = 10 V; Fig. 1 IDM Ptot Tstg Tj
BUK761R4-30E
Min -20
[1] [1]
Max 30 30 20 120 120 1425 324 175 175
Unit V V V A A A W °C °C
2 / 13
-55 -55
peak drain current total power dissipation storage temperature junction temperature
Tmb = 25 °C; pulsed; tp ≤ 10 µs; Fig. 4 Tmb = 25 °C; Fig. 2
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© NXP B.V. 2012. All rights reserved
Product data sheet
5 October 2012
NXP Semiconductors
BUK761R4-30E
N-channel TrenchMOS standard level FET
Symbol IS ISM EDS(AL)S
Parameter source current peak source current
Conditions Tmb = 25 °C pulsed; tp ≤ 10 µs; Tmb = 25 °C ID = 120 A; Vsup ≤ 30 V; RGS = 50 Ω; V.