D2PAK
BUK7607-30B
N-channel TrenchMOS standard level FET
Rev. 02 — 21 February 2011
Product data sheet
1. Product pro...
D2PAK
BUK7607-30B
N-channel TrenchMOS standard level FET
Rev. 02 — 21 February 2011
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect
Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
AEC Q101 compliant Low conduction losses due to low
on-state resistance
Suitable for standard level gate drive sources
Suitable for thermally demanding environments due to 175 °C rating
1.3 Applications
12 V loads Automotive systems
General purpose power switching Motors, lamps and solenoids
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID drain current
VGS = 10 V; Tmb = 25 °C; see Figure 3
Ptot total power dissipation Tmb = 25 °C; see Figure 2 Static characteristics
RDSon
drain-source on-state resistance
VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 11; see Figure 12
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source avalanche energy
Dynamic characteristics
ID = 75 A; Vsup ≤ 30 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C; unclamped
QGD
gate-drain charge
VGS = 10 V; ID = 25 A; VDS = 24 V; Tj = 25 °C; see Figure 13
[1] Continuous current is limited by package.
Min Typ Max Unit - - 30 V [1] - - 75 A - - 157 W - 5.9 7 mΩ
- - 329 mJ
- 12...