Document
BUK952R4-40C
N-channel TrenchMOS logic level FET
Rev. 02 — 11 April 2008 Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
Low conduction losses due to low on-state resistance Suitable for logic level gate drive sources Q101 compliant Suitable for thermally demanding environments due to 175 °C rating
1.3 Applications
12 V loads General purpose power switching Automotive systems Motors, lamps and solenoids
1.4 Quick reference data
Table 1. Symbol VDS ID Ptot EDS(AL)S Quick reference Parameter drain-source voltage drain current total power dissipation non-repetitive drain-source avalanche energy gate-drain charge Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 5 V; Tj = 25 °C; see Figure 1 and 4 Tmb = 25 °C; see Figure 2 ID = 100 A; Vsup ≤ 40 V; RGS = 50 Ω; VGS = 5 V; Tj(init) = 25 °C; unclamped VGS = 5 V; ID = 25 A; VDS = 32 V; see Figure 14 VGS = 5 V; ID = 25 A; Tj = 25 °C; see Figure 12, 11 and 13
[1][2]
Min -
Typ -
Max 40 100 333 1.2
Unit V A W J
Avalanche ruggedness
Dynamic characteristics QGD 73 nC
Static characteristics RDSon drain-source on-state resistance 2.1 2.4 mΩ
[1] [2]
Continuous current is limited by package. Refer to document 9397 750 12572 for further information.
NXP Semiconductors
BUK952R4-40C
N-channel TrenchMOS logic level FET
2. Pinning information
Table 2. Pin 1 2 3 mb Pinning Symbol G D S D Description gate drain source mounting base; connected to drain
G
mbb076
Simplified outline
mb
Graphic symbol
D
S
1 2 3
SOT78 (TO-220AB)
3. Ordering information
Table 3. Ordering information Package Name BUK952R4-40C TO-220AB Description plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB Version SOT78 Type number
4. Limiting values
Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS ID drain-source voltage drain-gate voltage gate-source voltage drain current Tmb = 25 °C; VGS = 5 V; see Figure 1 VGS = 5 V; Tj = 100 °C; see Figure 1 VGS = 5 V; Tj = 25 °C; see Figure 1 and 4 IDM Ptot Tstg Tj peak drain current total power dissipation storage temperature junction temperature ID = 100 A; Vsup ≤ 40 V; RGS = 50 Ω; VGS = 5 V; Tj(init) = 25 °C; unclamped see Figure 3
[4][5] [6] [1] [2][3] [2][3]
Conditions Tj ≥ 25 °C; Tj ≤ 175 °C RGS = 20 kΩ
Min -15 -55 -55 -
Max 40 40 15 270 100 100 1080 333 175 175 1.2
Unit V V V A A A A W °C °C J
Tmb = 25 °C; tp ≤ 10 μs; pulsed; see Figure 4 Tmb = 25 °C; see Figure 2
Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy EDS(AL)R repetitive drain-source avalanche energy
-
-
J
BUK952R4-40C_2
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 02 — 11 April 2008
2 of 13
NXP Semiconductors
BUK952R4-40C
N-channel TrenchMOS logic level FET
Table 4. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Source-drain diode IS ISM
[1] [2] [3] [4] [5] [6]
Conditions Tmb = 25 °C tp ≤ 10 μs; pulsed; Tmb = 25 °C
[2][3]
Min -
Max 100 1080
Unit A A
source current peak source current
Current is limited by chip power dissipation rating. Continuous current is limited by package. Refer to document 9397 750 12572 for further information. Single-pulse avalanche rating limited by maximum junction temperature of 175 °C. Repetitive avalanche rating limited by an average junction temperature of 170 °C. Refer to application note AN10273 for further information.
300 ID (A) 200
003aac267
120 Pder (%) 80
03na19
100
40
(1)
0 0 50 100 150 Tmb (°C) 200
0 0 50 100 150 Tmb (°C) 200
VGS 5 V (1) Capped at 100 A due to package.
P der =
P tot P tot (25°C )
× 100 %
Fig 1. Continuous drain current as a function of mounting base temperature
Fig 2. Normalized total power dissipation as a function of mounting base temperature
BUK952R4-40C_2
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 02 — 11 April 2008
3 of 13
NXP Semiconductors
BUK952R4-40C
N-channel TrenchMOS logic level FET
103 IAL (A) 102
(1)
003aac266
(2)
10
(3)
1
10-1 10-3
10-2
10-1
1 t (ms) 10 AL
(1) Singleípulse; T j = 25 °C . (2) Singleípulse; T j = 150 °C . (3) Repetitive.
Fig 3. Single-pulse and repetitive avalanche rating; avalanche current as a function of avalanche time
104 ID (A) 103 Limit RDSon = VDS / ID
003aac271
tp = 10 μs
102
(1)
100 μs
10 DC 1 1 ms 10 ms 100 ms
10-1 10-1
1
10
VDS (V)
102
Tmb = 25 °C ; IDM is single pulse (1) Capped at 100 A due to package.
Fig 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BUK952R4-40C_2
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 02 — 11 April 2008
4 of 13
NXP Sem.