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BUK952R4-40C Dataheets PDF



Part Number BUK952R4-40C
Manufacturers NXP Semiconductors
Logo NXP Semiconductors
Description N-Channel MOSFET
Datasheet BUK952R4-40C DatasheetBUK952R4-40C Datasheet (PDF)

BUK952R4-40C N-channel TrenchMOS logic level FET Rev. 02 — 11 April 2008 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits „ Low conduction losses due to low on-state resistance „ Suitable for logic level gate drive sour.

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BUK952R4-40C N-channel TrenchMOS logic level FET Rev. 02 — 11 April 2008 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits „ Low conduction losses due to low on-state resistance „ Suitable for logic level gate drive sources „ Q101 compliant „ Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications „ 12 V loads „ General purpose power switching „ Automotive systems „ Motors, lamps and solenoids 1.4 Quick reference data Table 1. Symbol VDS ID Ptot EDS(AL)S Quick reference Parameter drain-source voltage drain current total power dissipation non-repetitive drain-source avalanche energy gate-drain charge Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 5 V; Tj = 25 °C; see Figure 1 and 4 Tmb = 25 °C; see Figure 2 ID = 100 A; Vsup ≤ 40 V; RGS = 50 Ω; VGS = 5 V; Tj(init) = 25 °C; unclamped VGS = 5 V; ID = 25 A; VDS = 32 V; see Figure 14 VGS = 5 V; ID = 25 A; Tj = 25 °C; see Figure 12, 11 and 13 [1][2] Min - Typ - Max 40 100 333 1.2 Unit V A W J Avalanche ruggedness Dynamic characteristics QGD 73 nC Static characteristics RDSon drain-source on-state resistance 2.1 2.4 mΩ [1] [2] Continuous current is limited by package. Refer to document 9397 750 12572 for further information. NXP Semiconductors BUK952R4-40C N-channel TrenchMOS logic level FET 2. Pinning information Table 2. Pin 1 2 3 mb Pinning Symbol G D S D Description gate drain source mounting base; connected to drain G mbb076 Simplified outline mb Graphic symbol D S 1 2 3 SOT78 (TO-220AB) 3. Ordering information Table 3. Ordering information Package Name BUK952R4-40C TO-220AB Description plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB Version SOT78 Type number 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS ID drain-source voltage drain-gate voltage gate-source voltage drain current Tmb = 25 °C; VGS = 5 V; see Figure 1 VGS = 5 V; Tj = 100 °C; see Figure 1 VGS = 5 V; Tj = 25 °C; see Figure 1 and 4 IDM Ptot Tstg Tj peak drain current total power dissipation storage temperature junction temperature ID = 100 A; Vsup ≤ 40 V; RGS = 50 Ω; VGS = 5 V; Tj(init) = 25 °C; unclamped see Figure 3 [4][5] [6] [1] [2][3] [2][3] Conditions Tj ≥ 25 °C; Tj ≤ 175 °C RGS = 20 kΩ Min -15 -55 -55 - Max 40 40 15 270 100 100 1080 333 175 175 1.2 Unit V V V A A A A W °C °C J Tmb = 25 °C; tp ≤ 10 μs; pulsed; see Figure 4 Tmb = 25 °C; see Figure 2 Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy EDS(AL)R repetitive drain-source avalanche energy - - J BUK952R4-40C_2 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 02 — 11 April 2008 2 of 13 NXP Semiconductors BUK952R4-40C N-channel TrenchMOS logic level FET Table 4. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Source-drain diode IS ISM [1] [2] [3] [4] [5] [6] Conditions Tmb = 25 °C tp ≤ 10 μs; pulsed; Tmb = 25 °C [2][3] Min - Max 100 1080 Unit A A source current peak source current Current is limited by chip power dissipation rating. Continuous current is limited by package. Refer to document 9397 750 12572 for further information. Single-pulse avalanche rating limited by maximum junction temperature of 175 °C. Repetitive avalanche rating limited by an average junction temperature of 170 °C. Refer to application note AN10273 for further information. 300 ID (A) 200 003aac267 120 Pder (%) 80 03na19 100 40 (1) 0 0 50 100 150 Tmb (°C) 200 0 0 50 100 150 Tmb (°C) 200 VGS • 5 V (1) Capped at 100 A due to package. P der = P tot P tot (25°C ) × 100 % Fig 1. Continuous drain current as a function of mounting base temperature Fig 2. Normalized total power dissipation as a function of mounting base temperature BUK952R4-40C_2 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 02 — 11 April 2008 3 of 13 NXP Semiconductors BUK952R4-40C N-channel TrenchMOS logic level FET 103 IAL (A) 102 (1) 003aac266 (2) 10 (3) 1 10-1 10-3 10-2 10-1 1 t (ms) 10 AL (1) Singleípulse; T j = 25 °C . (2) Singleípulse; T j = 150 °C . (3) Repetitive. Fig 3. Single-pulse and repetitive avalanche rating; avalanche current as a function of avalanche time 104 ID (A) 103 Limit RDSon = VDS / ID 003aac271 tp = 10 μs 102 (1) 100 μs 10 DC 1 1 ms 10 ms 100 ms 10-1 10-1 1 10 VDS (V) 102 Tmb = 25 °C ; IDM is single pulse (1) Capped at 100 A due to package. Fig 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage BUK952R4-40C_2 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 02 — 11 April 2008 4 of 13 NXP Sem.


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