N-Channel MOSFET
BUK7Y7R6-40E
20 February 2013
LF
PA K
N-channel 40 V, 7.6 mΩ standard level MOSFET in LFPAK56
Product data sheet
1....
Description
BUK7Y7R6-40E
20 February 2013
LF
PA K
N-channel 40 V, 7.6 mΩ standard level MOSFET in LFPAK56
Product data sheet
1. General description
Standard level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.
2. Features and benefits
Q101 compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 °C rating True standard level gate with VGS(th) rating of greater than 1 V at 175 °C
3. Applications
12 V Automotive systems Motors, lamps and solenoid control Transmission control Ultra high performance power switching
4. Quick reference data
Table 1. Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; Fig. 1 Tmb = 25 °C; Fig. 2 VGS = 10 V; ID = 20 A; Tj = 25 °C; Fig. 11 VGS = 10 V; ID = 20 A; VDS = 32 V; Tj = 25 °C; Fig. 13; Fig. 14 8.2 nC Min Typ Max 40 79 94.3 Unit V A W
Static characteristics drain-source on-state resistance 5.5 7.6 mΩ
Dynamic characteristics QGD gate-drain charge
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NXP Semiconductors
BUK7Y7R6-40E
N-channel 40 V, 7.6 mΩ standard level MOSFET in LFPAK56
5. Pinning information
Table 2. Pin 1 2 3 4 mb Pinning information Symbol Description S S S G D source source source g...
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