BUK9Y14-40B
N-channel TrenchMOS logic level FET
Rev. 03 — 2 June 2008 Product data sheet
1. Product profile
1.1 General...
BUK9Y14-40B
N-channel TrenchMOS logic level FET
Rev. 03 — 2 June 2008 Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect
Transistor (FET) in a plastic package using NXP High Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
Low conduction losses due to low on-state resistance Suitable for logic level gate drive sources Q101 compliant Suitable for thermally demanding environments due to 175 °C rating
1.3 Applications
Air bag Automotive transmission control Fuel pump and injection Automotive ABS systems Diesel injection systems Motors, lamps and solenoids
1.4 Quick reference data
Table 1. Symbol VDS ID Ptot QGD Quick reference Parameter drain-source voltage drain current total power dissipation gate-drain charge Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 5 V; Tmb = 25 °C; see Figure 4 and 1 Tmb = 25 °C; see Figure 2 VGS = 5 V; ID = 10 A; VDS = 32 V; see Figure 14 VGS = 5 V; ID = 20 A; Tj = 25 °C; see Figure 12 and 13 ID = 56 A; Vsup ≤ 40 V; RGS = 50 Ω; VGS = 5 V; Tj(init) = 25 °C; unclamped Min Typ 9 Max 40 56 85 Unit V A W nC
Dynamic characteristics
Static characteristics RDSon drain-source on-state resistance 12 14 mΩ
Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy 89 mJ
NXP Semiconductors
BUK9Y14-40B
N-channel Tre...