BUK95/96/9E04-40A
TrenchMOS™ logic level FET
Rev. 01 — 24 October 2001 Product data
1. Description
N-channel enhancemen...
BUK95/96/9E04-40A
TrenchMOS™ logic level FET
Rev. 01 — 24 October 2001 Product data
1. Description
N-channel enhancement mode field-effect power
transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance. Product availability: BUK9504-40A in SOT78 (TO-220AB); BUK9604-40A in SOT404 (D 2-PAK); BUK9E04-40A in SOT226 (I2-PAK).
2. Features
s s s s TrenchMOS™ technology Q101 compliant 175 °C rated Logic level compatible.
3. Applications
s Automotive and general purpose power switching: x 12 V loads x Motors, lamps and solenoids.
4. Pinning information
Table 1: Pin 1 2 3 mb Pinning - SOT78, SOT404, SOT226 simplified outline and symbol Description gate (g) drain (d) source (s) mounting base, connected to drain (d)
2
MBB076
Simplified outline
[1]
mb mb
mb
Symbol
d
g s
1
MBK106
3
MBK116
1 2 3
MBK112
1 2 3
SOT78 (TO-220AB)
[1]
SOT404 (D2-PAK)
SOT226 (I2-PAK)
It is not possible to make connection to pin 2 of the SOT404 package.
Philips Semiconductors
BUK95/96/9E04-40A
TrenchMOS™ logic level FET
5. Quick reference data
Table 2: VDS ID Ptot Tj RDSon Quick reference data Conditions Tmb = 25 °C; VGS = 5 V Tmb = 25 °C Tj = 25 °C; VGS = 5 V; ID = 25 A Tj = 25 °C; VGS = 4.3 V; ID = 25 A Tj = 25 °C; VGS = 10 V; ID = 25 A
[1]
Symbol Parameter drain-source voltage (DC) drain current (DC) total power dissipation junction temperature drain-source on-state resistance
Typ 3.5 3.7 2.9
Max 40 198 300 175 4.4 5.9 4
Unit V A W °C mΩ mΩ mΩ
6. ...