N-channel 80V 6.9m ohm standard level MOSFET
D2
PA K
PSMN6R5-80BS
N-channel 80V 6.9mΩ standard level MOSFET in D2PAK
Rev. 2 — 2 March 2012 Product data sheet
1. P...
Description
D2
PA K
PSMN6R5-80BS
N-channel 80V 6.9mΩ standard level MOSFET in D2PAK
Rev. 2 — 2 March 2012 Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in D2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.
1.2 Features and benefits
High efficiency due to low switching and conduction losses Suitable for standard level gate drive sources
1.3 Applications
DC-to-DC converters Load switching Motor control Server power supplies
1.4 Quick reference data
Table 1. Symbol VDS ID Ptot Tj RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation junction temperature drain-source on-state resistance gate-drain charge total gate charge non-repetitive drain-source avalanche energy VGS = 10 V; ID = 15 A; Tj = 25 °C; see Figure 13 VGS = 10 V; ID = 25 A; VDS = 40 V; see Figure 14; see Figure 15 Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tmb = 25 °C; VGS = 10 V; see Figure 1 Tmb = 25 °C; see Figure 2
[1]
Min -55 -
Typ 5.9
Max 80 100 210 175 6.9
Unit V A W °C mΩ
Static characteristics
Dynamic characteristics QGD QG(tot) EDS(AL)S 16 71 700 nC nC mJ
Avalanche ruggedness VGS = 10 V; Tj(init) = 25 °C; ID = 49 A; Vsup ≤ 80 V; RGS = 50 Ω; unclamped
[1]
Continuous current rating is limited by package.
NXP Semiconductors
PSMN6R5-80BS
N-channel 80V 6.9mΩ standard level MOSFET in D2PAK
2. Pinning information
Tab...
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