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PSMN010-25YLC Dataheets PDF



Part Number PSMN010-25YLC
Manufacturers NXP Semiconductors
Logo NXP Semiconductors
Description MOSFET
Datasheet PSMN010-25YLC DatasheetPSMN010-25YLC Datasheet (PDF)

LF PA K PSMN010-25YLC N-channel 25 V 10.6 mΩ logic level MOSFET in LFPAK using NextPower technology Rev. 2 — 25 October 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits  High reliability Power SO8 package, qualified to 175°C  Low parasitic inductance and resistance  Op.

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LF PA K PSMN010-25YLC N-channel 25 V 10.6 mΩ logic level MOSFET in LFPAK using NextPower technology Rev. 2 — 25 October 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits  High reliability Power SO8 package, qualified to 175°C  Low parasitic inductance and resistance  Optimised for 4.5V Gate drive utilising NextPower Superjunction technology  Ultra low QG, QGD, & QOSS for high system efficiencies at low and high loads 1.3 Applications  DC-to-DC converters  Load switching  Synchronous buck regulator 1.4 Quick reference data Table 1. Symbol VDS ID Ptot Tj RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation junction temperature drain-source on-state resistance VGS = 4.5 V; ID = 10 A; Tj = 25 °C; see Figure 12 VGS = 10 V; ID = 10 A; Tj = 25 °C; see Figure 12 VGS = 4.5 V; ID = 10 A; VDS = 12 V; see Figure 14; see Figure 15 Conditions 25 °C ≤ Tj ≤ 175 °C Tmb = 25 °C; VGS = 10 V; see Figure 1 Tmb = 25 °C; see Figure 2 Min -55 Typ 11.9 9 1.5 5 Max 25 39 30 175 14 10.6 Unit V A W °C mΩ mΩ nC nC Static characteristics Dynamic characteristics QGD QG(tot) gate-drain charge total gate charge NXP Semiconductors PSMN010-25YLC N-channel 25 V 10.6 mΩ logic level MOSFET in LFPAK using NextPower technology 2. Pinning information Table 2. Pin 1 2 3 4 mb Pinning information Symbol Description S S S G D source source source gate mounting base; connected to drain mbb076 Simplified outline mb Graphic symbol D G S 1 2 3 4 SOT669 (LFPAK; Power-SO8) 3. Ordering information Table 3. Ordering information Package Name PSMN010-25YLC LFPAK; Power-SO8 Description plastic single-ended surface-mounted package; 4 leads Version SOT669 Type number PSMN010-25YLC All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 2 — 25 October 2011 2 of 15 NXP Semiconductors PSMN010-25YLC N-channel 25 V 10.6 mΩ logic level MOSFET in LFPAK using NextPower technology 4. Limiting values Table 4. Symbol VDS VDGR VGS ID IDM Ptot Tstg Tj Tsld(M) VESD IS ISM EDS(AL)S Limiting values Parameter drain-source voltage drain-gate voltage gate-source voltage drain current peak drain current total power dissipation storage temperature junction temperature peak soldering temperature electrostatic discharge voltage source current peak source current non-repetitive drain-source avalanche energy MM (JEDEC JESD22-A115) Tmb = 25 °C pulsed; tp ≤ 10 µs; Tmb = 25 °C VGS = 10 V; Tj(init) = 25 °C; ID = 39 A; Vsup ≤ 25 V; unclamped; RGS = 50 Ω; see Figure 3 VGS = 10 V; Tmb = 25 °C; see Figure 1 VGS = 10 V; Tmb = 100 °C; see Figure 1 pulsed; tp ≤ 10 µs; Tmb = 25 °C; see Figure 4 Tmb = 25 °C; see Figure 2 Conditions 25 °C ≤ Tj ≤ 175 °C 25 °C ≤ Tj ≤ 1.


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