PSMN012-80PS

PSMN012-80PS N-channel 80 V 11 mΩ standard level MOSFET Rev. 02 — 25 June 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits „ High efficiency due to low switching and conduction losses „ Suitable for standard level gate drive sources 1.3 Applications „ DC-to-DC converters „ Load switching „ Motor control „ Server power supplies 1.4 Quick reference data Table 1. VDS ID Ptot Quick reference Conditions Tmb = 25 °C; VGS = 10 V; see Figure 1 Tmb = 25 °C; see Figure 2 Min Typ Max 80 74 148 Unit V A W drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C drain current total power dissipation gate-drain charge Symbol Parameter Dynamic characteristics QGD VGS = 10 V; ID = 25 A; VDS = 40 V; see Figure 14; see Figure 15 VGS = 10 V; ID = 15 A; Tj = 25 °C; [1] 9.4 nC Static characteristics RDSon drain-source on-state resistance 9 11 mΩ [1] Measured 3 mm from package. NXP Semiconductors PSMN012-80PS N-channel 80 V 11 mΩ standard level MOSFET 2. Pinning information Table 2. Pin 1 2 3 mb Pinning information Symbol G D S D Description gate drain source mounting base; connected to drain mb D Simplified outline Graphic symbol G mbb076 S 1 2 3 SOT78 (TO-220AB; SC-46) 3. Ordering information Table 3. Ordering information Package Name PSMN012-80PS TO-220AB; SC-46...