Document
PSMN3R9-60PS
1 February 2013
TO -2
20A
B
N-channel 60 V, 3.9 mΩ standard level MOSFET in SOT78
Product data sheet
1. General description
Standard level N-channel MOSFET in SOT78 using TrenchMOS technology. Product design and manufacture has been optimized for use in battery operated power tools.
2. Features and benefits
• • •
High efficiency due to low switching & conduction losses Robust construction for demanding applications Standard level gate
3. Applications
• • • •
Battery-powered tools Load switching Motor control Uninterruptible power supplies
4. Quick reference data
Table 1. Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; Fig. 1 Tmb = 25 °C; Fig. 2 VGS = 10 V; ID = 25 A; Tj = 25 °C; Fig. 11 ID = 25 A; VDS = 48 V; VGS = 10 V; Fig. 13; Fig. 14 103 33 nC nC
[1]
Min -
Typ -
Max 60 130 263
Unit V A W
Static characteristics drain-source on-state resistance 2.94 3.9 mΩ
Dynamic characteristics QG(tot) QGD EDS(AL)S total gate charge gate-drain charge
Avalanche ruggedness non-repetitive drainsource avalanche energy
[1]
ID = 130 A; Vsup ≤ 60 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C; unclamped; Fig. 3
-
-
283
mJ
Continuous current is limited by package.
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NXP Semiconductors
PSMN3R9-60PS
N-channel 60 V, 3.9 mΩ standard level MOSFET in SOT78
5. Pinning information
Table 2. Pin 1 2 3 mb Pinning information Symbol Description G D S D gate drain source mounting base; connected to drain
G
mbb076
Simplified outline
mb
Graphic symbol
D
S
1 2 3
TO-220AB (SOT78)
6. Ordering information
Table 3. Ordering information Package Name PSMN3R9-60PS TO-220AB Description plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB Version SOT78 Type number
7. Marking
Table 4. Marking codes Marking code PSMN3R9-60PS Type number PSMN3R9-60PS
8. Limiting values
Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VDGR VGS ID Parameter drain-source voltage drain-gate voltage gate-source voltage drain current Tmb = 25 °C; VGS = 10 V; Fig. 1 Tmb = 100 °C; VGS = 10 V; Fig. 1 IDM
PSMN3R9-60PS
Conditions Tj ≥ 25 °C; Tj ≤ 175 °C RGS = 20 kΩ
Min -20
[1]
Max 60 60 20 130 127 705
Unit V V V A A A
-
peak drain current
Tmb = 25 °C; pulsed; tp ≤ 10 µs; Fig. 4
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© NXP B.V. 2013. All rights reserved
Product data sheet
1 February 2013
2 / 13
NXP Semiconductors
PSMN3R9-60PS
N-channel 60 V, 3.9 mΩ standard level MOSFET in SOT78
Symbol Ptot Tstg Tj Tsld(M) IS ISM EDS(AL)S
Parameter total power dissipation storage temperature junction temperature peak soldering temperature
Conditions Tmb = 25 °C; Fig. 2
Min -55 -55 -
Max 263 175 175 260
Unit W °C °C °C
Source-drain diode source current peak source c.