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PSMN3R9-60PS Dataheets PDF



Part Number PSMN3R9-60PS
Manufacturers NXP Semiconductors
Logo NXP Semiconductors
Description MOSFET
Datasheet PSMN3R9-60PS DatasheetPSMN3R9-60PS Datasheet (PDF)

PSMN3R9-60PS 1 February 2013 TO -2 20A B N-channel 60 V, 3.9 mΩ standard level MOSFET in SOT78 Product data sheet 1. General description Standard level N-channel MOSFET in SOT78 using TrenchMOS technology. Product design and manufacture has been optimized for use in battery operated power tools. 2. Features and benefits • • • High efficiency due to low switching & conduction losses Robust construction for demanding applications Standard level gate 3. Applications • • • • Battery-powered .

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PSMN3R9-60PS 1 February 2013 TO -2 20A B N-channel 60 V, 3.9 mΩ standard level MOSFET in SOT78 Product data sheet 1. General description Standard level N-channel MOSFET in SOT78 using TrenchMOS technology. Product design and manufacture has been optimized for use in battery operated power tools. 2. Features and benefits • • • High efficiency due to low switching & conduction losses Robust construction for demanding applications Standard level gate 3. Applications • • • • Battery-powered tools Load switching Motor control Uninterruptible power supplies 4. Quick reference data Table 1. Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; Fig. 1 Tmb = 25 °C; Fig. 2 VGS = 10 V; ID = 25 A; Tj = 25 °C; Fig. 11 ID = 25 A; VDS = 48 V; VGS = 10 V; Fig. 13; Fig. 14 103 33 nC nC [1] Min - Typ - Max 60 130 263 Unit V A W Static characteristics drain-source on-state resistance 2.94 3.9 mΩ Dynamic characteristics QG(tot) QGD EDS(AL)S total gate charge gate-drain charge Avalanche ruggedness non-repetitive drainsource avalanche energy [1] ID = 130 A; Vsup ≤ 60 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C; unclamped; Fig. 3 - - 283 mJ Continuous current is limited by package. Scan or click this QR code to view the latest information for this product NXP Semiconductors PSMN3R9-60PS N-channel 60 V, 3.9 mΩ standard level MOSFET in SOT78 5. Pinning information Table 2. Pin 1 2 3 mb Pinning information Symbol Description G D S D gate drain source mounting base; connected to drain G mbb076 Simplified outline mb Graphic symbol D S 1 2 3 TO-220AB (SOT78) 6. Ordering information Table 3. Ordering information Package Name PSMN3R9-60PS TO-220AB Description plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB Version SOT78 Type number 7. Marking Table 4. Marking codes Marking code PSMN3R9-60PS Type number PSMN3R9-60PS 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VDGR VGS ID Parameter drain-source voltage drain-gate voltage gate-source voltage drain current Tmb = 25 °C; VGS = 10 V; Fig. 1 Tmb = 100 °C; VGS = 10 V; Fig. 1 IDM PSMN3R9-60PS Conditions Tj ≥ 25 °C; Tj ≤ 175 °C RGS = 20 kΩ Min -20 [1] Max 60 60 20 130 127 705 Unit V V V A A A - peak drain current Tmb = 25 °C; pulsed; tp ≤ 10 µs; Fig. 4 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved Product data sheet 1 February 2013 2 / 13 NXP Semiconductors PSMN3R9-60PS N-channel 60 V, 3.9 mΩ standard level MOSFET in SOT78 Symbol Ptot Tstg Tj Tsld(M) IS ISM EDS(AL)S Parameter total power dissipation storage temperature junction temperature peak soldering temperature Conditions Tmb = 25 °C; Fig. 2 Min -55 -55 - Max 263 175 175 260 Unit W °C °C °C Source-drain diode source current peak source c.


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