PMZ270XN

PMZ270XN N-channel TrenchMOS extremely low level FET Rev. 01. — 21 February 2008 BOTTOM VIEW Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. 1.2 Features I Profile 55 % lower than SOT23 I Low on-state resistance I Leadless package I Footprint 90 % smaller than SOT23 I Low threshold voltage I Fast switching 1.3 Applications I Driver circuits I DC-to-DC converters I Load switching in portable appliances 1.4 Quick reference data I VDS ≤ 20 V I RDSon ≤ 340 mΩ I ID ≤ 2.15 A I Ptot ≤ 2.50 W 2. Pinning information Table 1. Pin 1 2 3 Pinning Description gate (G) source (S) drain (D) 1 3 2 Transparent top view G G mbb076 mbb076 Simplified outline Symbol D D SOT883 (SC-101) S S NXP Semiconductors PMZ270XN N-channel TrenchMOS extremely low level FET 3. Ordering information Table 2. Ordering information Package Name PMZ270XN SC-101 Description leadless ultra small plastic package; 3 solder lands; body 1.0 × 0.6 × 0.5 mm Version SOT883 Type number 4. Limiting values CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or equivalent standards. Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS ID IDM Ptot Tstg Tj IS ISM Vesd drain-so...