PMZB350UPE

PMZB350UPE 1 August 2012 20 V, single P-channel Trench MOSFET Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology 1.8 kV ESD protected 1.3 Applications Relay driver High-speed line driver High-side loadswitch Switching circuits 1.4 Quick reference data Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s VGS = -4.5 V; ID = -0.3 A; Tj = 25 °C [1] Conditions Tj = 25 °C Min -8 - Typ - Max -20 8 -1.4 Unit V V A Static characteristics drain-source on-state resistance [1] 2 - 330 450 mΩ Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm . Scan or click this QR code to view the latest information for this product NXP Semiconductors PMZB350UPE 20 V, single P-channel Trench MOSFET 2. Pinning information Table 2. Pin 1 2 3 Pinning information Symbol Description G S D gate source drain Simplified outline 1 3 2 Transparent top view G Graphic symbol D DFN1006B-3 (SOT883B) S 017aaa259 3. Ordering information Table 3. Ordering information Package Name PMZB350UPE DFN1006B-3 Description Leadless ultra small plasti...