PMZB300XN

PMZB300XN 1 August 2012 20 V, single N-channel Trench MOSFET Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Fast switching Trench MOSFET technology Low threshold voltage Ultra thin package profile of 0.37mm height 1.3 Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits 1.4 Quick reference data Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current VGS = 4.5 V; Tamb = 25 °C VGS = 4.5 V; ID = 200 mA; Tj = 25 °C [1] Conditions Tj = 25 °C Min -12 - Typ - Max 20 12 1 Unit V V A Static characteristics drain-source on-state resistance [1] - 0.3 0.38 Ω Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm . 2 Scan or click this QR code to view the latest information for this product NXP Semiconductors PMZB300XN 20 V, single N-channel Trench MOSFET 2. Pinning information Table 2. Pin 1 2 3 Pinning information Symbol Description G S D gate source drain Simplified outline 1 3 2 Transparent top view G S 017aaa253 Graphic symbol D DFN1006B-3 (SOT883B) 3. Ordering information Table 3. Ordering information Package Name PMZB300XN DFN1006B-3 Description Leadless ultra small plastic package; 3 solder la...