PMZ950UPE

PMZ950UPE 10 July 2014 SO T8 83 20 V, P-channel Trench MOSFET Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Leadless ultra small and ultra thin SMD plastic package: 1.0 × 0.6 × 0.48 mm ElectroStatic Discharge (ESD) protection > 1 kV HBM Drain-source on-state resistance RDSon = 1.02 Ω 3. Applications Relay driver High-speed line driver High-side load switch Switching circuits 4. Quick reference data Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current VGS = -4.5 V; Tamb = 25 °C VGS = -4.5 V; ID = -500 mA; Tj = 25 °C [1] Conditions Tj = 25 °C Min -8 - Typ - Max -20 8 -500 Unit V V mA Static characteristics drain-source on-state resistance [1] 2 - 1.02 1.4 Ω Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm . Scan or click this QR code to view the latest information for this product NXP Semiconductors PMZ950UPE 20 V, P-channel Trench MOSFET 5. Pinning information Table 2. Pin 1 2 3 Pinning information Symbol Description G S D gate source drain Simplified outline 1 2 Transparent top view 3 G Graphic symbol D DFN1006-3 (SOT883) S 017aaa259 6. Ordering information Table 3. Ordering informati...