PMF87EN
1 August 2012
30 V, single N-channel Trench MOSFET
Product data sheet
1. Product profile
1.1 General descript...
PMF87EN
1 August 2012
30 V, single N-channel Trench MOSFET
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect
Transistor (FET) in a SOT323 (SC-70) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology 1.3 Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits 1.4 Quick reference data
Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current VGS = 10 V; Tamb = 25 °C; t ≤ 5 s VGS = 10 V; ID = 1.7 A; Tj = 25 °C
[1]
Conditions Tj = 25 °C
Min -20 -
Typ -
Max 30 20 1.9
Unit V V A
Static characteristics drain-source on-state resistance
[1]
2
-
67
80
mΩ
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm .
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NXP Semiconductors
PMF87EN
30 V, single N-channel Trench MOSFET
2. Pinning information
Table 2. Pin 1 2 3 Pinning information Symbol Description G S D gate source drain
1 2
Simplified outline
3
Graphic symbol
D
G S
017aaa253
SC-70 (SOT323)
3. Ordering information
Table 3. Ordering information Package Name PMF87EN SC-70 Description plastic surface-mounted package; 3 leads Version SOT323 Type number
4. Marking
Table 4. Marking codes Marking code
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