PMR290UNE

SO T4 16 PMR290UNE 20 V, 700 mA N-channel Trench MOSFET Rev. 1 — 13 September 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits  Very fast switching  Trench MOSFET technology  ESD protection up to 2 kV  AEC-Q101 qualified 1.3 Applications  Relay driver  High-speed line driver  Low-side loadswitch  Switching circuits 1.4 Quick reference data Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current drain-source on-state resistance VGS = 4.5 V; Tamb = 25 °C VGS = 4.5 V; ID = 500 mA; Tj = 25 °C [1] Conditions Tj = 25 °C Min -8 - Typ 290 Max 20 8 700 380 Unit V V mA mΩ Static characteristics [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2. NXP Semiconductors PMR290UNE 20 V, 700 mA N-channel Trench MOSFET 2. Pinning information Table 2. Pin 1 2 3 Pinning information Symbol Description G S D gate source drain 1 2 G Simplified outline 3 Graphic symbol D SOT416 (SC-75) S 017aaa255 3. Ordering information Table 3. Ordering information Package Name PMR290UNE SC-75 Description plastic surface-mounted package; 3 leads Version SOT416 Type number 4. Marking Table 4. Marking codes Marking code AC Type number PMR290UNE PMR290UNE All information provided i...