PMN25EN

SO T4 57 PMN25EN 30 V, 6.2 A N-channel Trench MOSFET Rev. 1 — 29 August 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits  Logic level compatible  Very fast switching  Trench MOSFET technology 1.3 Applications  Relay driver  High-speed line driver  Low-side loadswitch  Switching circuits 1.4 Quick reference data Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current drain-source on-state resistance VGS = 10 V; Tamb = 25 °C VGS = 10 V; ID = 6.2 A; Tj = 25 °C [1] Conditions Tj = 25 °C Min -20 - Typ 20 Max 30 20 6.2 23 Unit V V A mΩ Static characteristics [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2. 2. Pinning information Table 2. Pin 1 2 3 4 5 6 Pinning information Symbol Description D D G S D D drain drain gate source drain drain 1 2 3 S 017aaa253 Simplified outline 6 5 4 Graphic symbol D G SOT457 (TSOP6) NXP Semiconductors PMN25EN 30 V, 6.2 A N-channel Trench MOSFET 3. Ordering information Table 3. Ordering information Package Name PMN25EN TSOP6 Description plastic surface-mounted package (TSOP6); 6 leads Version SOT457 Type number 4. Marking Table 4. PMN25EN Marking codes Marking code T8 Type number PMN...