PSMN020-100YS

PSMN020-100YS N-channel 100V 20.5mΩ standard level MOSFET in LFPAK Rev. 02 — 7 January 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits „ Advanced TrenchMOS provides low RDSon and low gate charge „ High efficiency gains in switching power converters „ Improved mechanical and thermal characteristics „ LFPAK provides maximum power density in a Power SO8 package 1.3 Applications „ DC-to-DC converters „ Lithium-ion battery protection „ Load switching „ Motor control „ Server power supplies 1.4 Quick reference data Table 1. VDS ID Ptot Tj Quick reference Conditions Tmb = 25 °C; VGS = 10 V; see Figure 1 Tmb = 25 °C; see Figure 2 Min -55 VGS = 10 V; Tj(init) = 25 °C; ID = 43 A; Vsup ≤ 100 V; unclamped; RGS = 50 Ω VGS = 10 V; ID = 30 A; VDS = 50 V; see Figure 14 and 15 Typ Max 100 43 106 175 71 Unit V A W °C mJ drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C drain current total power dissipation junction temperature Symbol Parameter Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy Dynamic characteristics QGD QG(tot) gate-drain charge total gate charge 11.8 41 nC nC NXP Semiconductors PSMN020-100YS N-channel 100V 20.5mΩ standard level MOSFET in LFPAK Quick reference …continued Conditions VGS = 10 V; ID = 15 A; Tj = 100 °C; see F...