PSMN2R0-30YLE

PSMN2R0-30YLE 12 October 2012 N-channel 30 V 2 mΩ logic level MOSFET in LFPAK Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Enhanced forward biased safe operating area for superior linear mode operation Very low Rdson for low conduction losses 1.3 Applications Electronic fuse Hot swap Load switch Soft start 1.4 Quick reference data Table 1. Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tmb = 25 °C; VGS = 10 V; Fig. 1 Tmb = 25 °C; Fig. 2 VGS = 10 V; ID = 25 A; Tj = 25 °C; Fig. 12 VGS = 4.5 V; ID = 25 A; Tj = 25 °C; Fig. 12 Dynamic characteristics QGD QG(tot) gate-drain charge total gate charge VGS = 4.5 V; ID = 25 A; VDS = 15 V; Fig. 14; Fig. 15 VGS = 10 V; ID = 25 A; VDS = 15 V; Fig. 14; Fig. 15 87 nC 13.8 nC 3 3.5 mΩ [1] Min - Typ - Max 30 100 272 Unit V A W Static characteristics drain-source on-state resistance 1.7 2 mΩ Scan or click this QR code to view the latest information for this product NXP Semiconductors PSMN2R0-30YLE N-channel 30 V 2 mΩ logic level MOSFET in LFPAK Symbol EDS(AL)S Parameter non-repetitive drainsource avalanche energy [1] Conditions VGS = 10 V; Tj(init) = 25 °C; ID = 100 A; Vsup ≤ 30 V; unclamped; R...