PSMN020-30MLC

PSMN020-30MLC 4 September 2012 N-channel 30 V 18.1 mΩ logic level MOSFET in LFPAK33 using TrenchMOS Technology Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK33 package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Low parasitic inductance and resistance Optimised for 4.5V Gate drive utilising Superjunction technology Ultra low QG, QGD, and QOSS for high system efficiencies at low and high loads 1.3 Applications DC-to-DC converters Load switching Synchronous buck regulator 1.4 Quick reference data Table 1. Symbol VDS ID Ptot Tj RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation junction temperature Conditions Tj = 25 °C Tmb = 25 °C; VGS = 10 V; Fig. 1 Tmb = 25 °C; Fig. 2 Min -55 Typ Max 30 31.8 33 175 Unit V A W °C Static characteristics drain-source on-state resistance VGS = 4.5 V; ID = 5 A; Tj = 25 °C; Fig. 10 VGS = 10 V; ID = 5 A; Tj = 25 °C; Fig. 10 Dynamic characteristics QGD QG(tot) gate-drain charge total gate charge VGS = 4.5 V; ID = 5 A; VDS = 15 V; Fig. 12; Fig. 13 VGS = 4.5 V; ID = 5 A; VDS = 15 V; Fig. 12; Fig. 13 4.6 nC 1.7 nC 14.7 18.1 mΩ 20.5 27 mΩ Scan or click this QR code to view the latest information for this product NXP Semiconductors PSMN020-30MLC N-channel 30 V 18.1 mΩ logic level MOSFET in LFPAK33 using TrenchMOS Technology ...