TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC2873
Power Amplifier Applications Power Switching Applica...
TOSHIBA
Transistor Silicon
NPN Epitaxial Type (PCT Process)
2SC2873
Power Amplifier Applications Power Switching Applications
2SC2873
Unit: mm
Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) High-speed switching time: tstg = 1.0 μs (typ.) Small flat package PC = 1.0 to 2.0 W (mounted on a ceramic substrate) Complementary to 2SA1213
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current
Collector power dissipation
Junction temperature Storage temperature range
VCBO
50
V
VCEO
50
V
VEBO
5
V
IC
2
A
IB
0.4
A
PC
500
PC
mW
1000
(Note 1)
Tj
150
°C
Tstg
−55 to 150
°C
JEDEC
―
JEITA
SC-62
TOSHIBA
2-5K1A
Weight: 0.05 g (typ.)
Note 1: Mounted on a ceramic substrate (250 mm2 × 0.8 t)
Note 2:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Start of commercial production
1980-0...