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NX3008NBKMB Dataheets PDF



Part Number NX3008NBKMB
Manufacturers NXP Semiconductors
Logo NXP Semiconductors
Description MOSFET
Datasheet NX3008NBKMB DatasheetNX3008NBKMB Datasheet (PDF)

NX3008NBKMB 83B 30 V, single N-channel Trench MOSFET Rev. 1 — 11 May 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. SO T8 1.2 Features and benefits  Very fast switching  Low threshold voltage  Trench MOSFET technology  ESD protection up to 2 kV  Ultra thin package profile with 0.37 mm hei.

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NX3008NBKMB 83B 30 V, single N-channel Trench MOSFET Rev. 1 — 11 May 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. SO T8 1.2 Features and benefits  Very fast switching  Low threshold voltage  Trench MOSFET technology  ESD protection up to 2 kV  Ultra thin package profile with 0.37 mm height 1.3 Applications  Relay driver  High-speed line driver  Low-side loadswitch  Switching circuits 1.4 Quick reference data Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current drain-source on-state resistance VGS = 4.5 V; Tamb = 25 °C VGS = 4.5 V; ID = 350 mA; Tj = 25 °C [1] Conditions Tj = 25 °C Min -8 - Typ 1 Max 30 8 530 1.4 Unit V V mA Ω Static characteristics [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm2. NXP Semiconductors NX3008NBKMB 30 V, single N-channel Trench MOSFET 2. Pinning information Table 2. Pin 1 2 3 Pinning information Symbol Description G S D gate source drain 1 3 2 Transparent top view G D Simplified outline Graphic symbol SOT883B (DFN1006B-3) S 017aaa255 3. Ordering information Table 3. Ordering information Package Name NX3008NBKMB DFN1006B-3 Description Leadless ultra small plastic package; 3 solder lands; body 1.0 × 0.6 × 0.37 mm Version SOT883B Type number 4. Marking Table 4. Marking codes Marking code 0000 0011 Type number NX3008NBKMB PIN 1 INDICATION READING DIRECTION READING EXAMPLE: 0111 1011 MARKING CODE (EXAMPLE) READING DIRECTION 006aac673 Fig 1. DFN1006B-3 (SOT883B) binary marking code description NX3008NBKMB All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved. Product data sheet Rev. 1 — 11 May 2012 2 of 15 NXP Semiconductors NX3008NBKMB 30 V, single N-channel Trench MOSFET 5. Limiting values Table 5. Symbol VDS VGS ID IDM Ptot Limiting values Parameter drain-source voltage gate-source voltage drain current peak drain current total power dissipation VGS = 4.5 V; Tamb = 25 °C VGS = 4.5 V; Tamb = 100 °C Tamb = 25 °C; single pulse; tp ≤ 10 µs Tamb = 25 °C Tsp = 25 °C Tj Tamb Tstg IS VESD [1] [2] [3] [2] [1] [1] [1] In accordance with the Absolute Maximum Rating System (IEC 60134). Conditions Tj = 25 °C Min -8 -55 -55 -65 Tamb = 25 °C HBM [1] Max 30 8 530 330 2.1 360 715 2700 150 150 150 530 2000 Unit V V mA mA A mW mW mW °C °C °C mA V junction temperature ambient temperature storage temperature source current electrostatic discharge voltage Source-drain diode ESD maximum rating [3] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm2. Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Measu.


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