Document
NX3008NBKMB
83B
30 V, single N-channel Trench MOSFET
Rev. 1 — 11 May 2012 Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
SO
T8
1.2 Features and benefits
Very fast switching Low threshold voltage Trench MOSFET technology ESD protection up to 2 kV Ultra thin package profile with 0.37 mm height
1.3 Applications
Relay driver High-speed line driver Low-side loadswitch Switching circuits
1.4 Quick reference data
Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current drain-source on-state resistance VGS = 4.5 V; Tamb = 25 °C VGS = 4.5 V; ID = 350 mA; Tj = 25 °C
[1]
Conditions Tj = 25 °C
Min -8 -
Typ 1
Max 30 8 530 1.4
Unit V V mA Ω
Static characteristics
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm2.
NXP Semiconductors
NX3008NBKMB
30 V, single N-channel Trench MOSFET
2. Pinning information
Table 2. Pin 1 2 3 Pinning information Symbol Description G S D gate source drain
1 3 2 Transparent top view
G D
Simplified outline
Graphic symbol
SOT883B (DFN1006B-3)
S
017aaa255
3. Ordering information
Table 3. Ordering information Package Name NX3008NBKMB DFN1006B-3 Description Leadless ultra small plastic package; 3 solder lands; body 1.0 × 0.6 × 0.37 mm Version SOT883B Type number
4. Marking
Table 4. Marking codes Marking code 0000 0011 Type number NX3008NBKMB
PIN 1 INDICATION
READING DIRECTION
READING EXAMPLE: 0111 1011 MARKING CODE (EXAMPLE) READING DIRECTION
006aac673
Fig 1.
DFN1006B-3 (SOT883B) binary marking code description
NX3008NBKMB
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1 — 11 May 2012
2 of 15
NXP Semiconductors
NX3008NBKMB
30 V, single N-channel Trench MOSFET
5. Limiting values
Table 5. Symbol VDS VGS ID IDM Ptot Limiting values Parameter drain-source voltage gate-source voltage drain current peak drain current total power dissipation VGS = 4.5 V; Tamb = 25 °C VGS = 4.5 V; Tamb = 100 °C Tamb = 25 °C; single pulse; tp ≤ 10 µs Tamb = 25 °C Tsp = 25 °C Tj Tamb Tstg IS VESD
[1] [2] [3]
[2] [1] [1] [1]
In accordance with the Absolute Maximum Rating System (IEC 60134).
Conditions Tj = 25 °C Min -8 -55 -55 -65 Tamb = 25 °C HBM
[1]
Max 30 8 530 330 2.1 360 715 2700 150 150 150 530 2000
Unit V V mA mA A mW mW mW °C °C °C mA V
junction temperature ambient temperature storage temperature source current electrostatic discharge voltage
Source-drain diode ESD maximum rating
[3]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm2. Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Measu.