NX3008NBKS

NX3008NBKS 30 V, 350 mA dual N-channel Trench MOSFET Rev. 1 — 1 August 2011 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits  Very fast switching  Low threshold voltage  Trench MOSFET technology  ESD protection up to 2 kV  AEC-Q101 qualified 1.3 Applications  Relay driver  High-speed line driver  Low-side loadswitch  Switching circuits 1.4 Quick reference data Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current drain-source on-state resistance VGS = 4.5 V; Tamb = 25 °C VGS = 4.5 V; ID = 350 mA; Tj = 25 °C [1] Conditions Tj = 25 °C Min -8 - Typ 1 Max 30 8 350 1.4 Unit V V mA Ω Per transistor Static characteristics (per transistor) [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm2. NXP Semiconductors NX3008NBKS 30 V, 350 mA dual N-channel Trench MOSFET 2. Pinning information Table 2. Pin 1 2 3 4 5 6 Pinning information Symbol Description S1 G1 D2 S2 G2 D1 source TR1 gate TR1 drain TR2 source TR2 gate TR2 drain TR1 1 2 3 G1 G2 Simplified outline 6 5 4 Graphic symbol D1 D2 SOT363 (SC-88) S1 S2 017aaa256 3. Ordering information Table 3. Ordering information Package Name NX3008NBKS SC-88 Description plastic surfac...