SO T3
NX3008PBKW
30 V, 200 mA P-channel Trench MOSFET
Rev. 1 — 1 August 2011 Product data sheet
1. Product profile
1.1...
SO T3
NX3008PBKW
30 V, 200 mA P-channel Trench MOSFET
Rev. 1 — 1 August 2011 Product data sheet
1. Product profile
1.1 General description
P-channel enhancement mode Field-Effect
Transistor (FET) in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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1.2 Features and benefits
Very fast switching Low threshold voltage Trench MOSFET technology ESD protection up to 2 kV AEC-Q101 qualified
1.3 Applications
Relay driver High-speed line driver High-side loadswitch Switching circuits
1.4 Quick reference data
Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current drain-source on-state resistance VGS = -4.5 V; Tamb = 25 °C VGS = -4.5 V; ID = -200 mA; Tj = 25 °C
[1]
Conditions Tj = 25 °C
Min -8 -
Typ 2.8
Max Unit -30 8 V V
-200 mA 4.1 Ω
Static characteristics
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
NXP Semiconductors
NX3008PBKW
30 V, 200 mA P-channel Trench MOSFET
2. Pinning information
Table 2. Pin 1 2 3 Pinning information Symbol Description G S D gate source drain
G
Simplified outline
3
Graphic symbol
D
1
2
SOT323 (SC-70)
S
017aaa259
3. Ordering information
Table 3. Ordering information Package Name NX3008PBKW SC-70 Description plastic surface-mounted package; 3 leads Version SOT323 Type number
4. Marking
Table 4. Marking codes Marking code[1] AB% Type number NX3008PBKW
[1...