PMZ1000UN
N-channel TrenchMOS standard level FET
Rev. 2 — 17 September 2010
BOTTOM VIEW
Product data sheet
1. Product ...
PMZ1000UN
N-channel TrenchMOS standard level FET
Rev. 2 — 17 September 2010
BOTTOM VIEW
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect
Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.
1.2 Features and benefits
Fast switching Low conduction losses due to low on-state resistance Saves PCB space due to small footprint (90 % smaller than SOT23) Suitable for use in compact designs due to low profile (55 % lower than SOT23)
1.3 Applications
Driver circuits Switching in portable appliances
1.4 Quick reference data
Table 1. Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation drain-source on-state resistance Conditions 25 °C ≤ Tj ≤ 150 °C Tamb = 25 °C; VGS = 10 V; see Figure 1 Tamb = 25 °C; see Figure 2 VGS = 4.5 V; ID = 0.2 A; Tj = 25 °C; see Figure 8 Min Typ Max 30 480 350 1 Unit V mA mW Ω
Static characteristics
NXP Semiconductors
PMZ1000UN
N-channel TrenchMOS standard level FET
2. Pinning information
Table 2. Pin 1 2 3 Pinning Symbol G S D Description gate source drain
1 3 2 Transparent top view
G
mbb076
Simplified outline
Graphic symbol
D
SOT883 (SC-101)
S
3. Ordering information
Table 3. Ordering information Package Name PMZ1000UN SC-101 Description Version leadless ultra small plastic pac...