PMZB370UNE
83B
30 V, single N-channel Trench MOSFET
Rev. 1 — 8 May 2012 Product data sheet
1. Product profile
1.1 Gene...
PMZB370UNE
83B
30 V, single N-channel Trench MOSFET
Rev. 1 — 8 May 2012 Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect
Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
SO
T8
1.2 Features and benefits
Very fast switching Trench MOSFET technology Low threshold voltage Ultra thin package profile with 0.37 mm height ESD protection up to 2 kV
1.3 Applications
Relay driver High-speed line driver Low-side loadswitch Switching circuits
1.4 Quick reference data
Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current drain-source on-state resistance VGS = 4.5 V; Tamb = 25 °C VGS = 4.5 V; ID = 500 mA; Tj = 25 °C
[1]
Conditions Tj = 25 °C
Min -8 -
Typ 370
Max 30 8 900 490
Unit V V mA mΩ
Static characteristics
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm2.
NXP Semiconductors
PMZB370UNE
30 V, single N-channel Trench MOSFET
2. Pinning information
Table 2. Pin 1 2 3 Pinning information Symbol Description G S D gate source drain
1 3 2 Transparent top view
G D
Simplified outline
Graphic symbol
SOT883B (DFN1006B-3)
S
017aaa255
3. Ordering information
Table 3. Ordering information Package Name PMZB370UNE DFN1006B-3 Description Leadless ultra small plastic package; 3 solder land...