PMT29EN

SO T2 PMT29EN 30 V, 6 A N-channel Trench MOSFET Rev. 1 — 31 August 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 23 1.2 Features and benefits  Logic-level compatible  Very fast switching  Trench MOSFET technology 1.3 Applications  Relay driver  High-speed line driver  Low-side loadswitch  Switching circuits 1.4 Quick reference data Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current drain-source on-state resistance VGS = 10 V; Tamb = 25 °C VGS = 10 V; ID = 6 A; Tj = 25 °C [1] Conditions Tj = 25 °C Min -20 - Typ 24 Max 30 20 6 29 Unit V V A mΩ Static characteristics [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2. 2. Pinning information Table 2. Pin 1 2 3 4 Pinning information Symbol Description G D S D gate drain source drain 1 2 3 S 017aaa253 Simplified outline 4 Graphic symbol D G SOT223 (SC-73) NXP Semiconductors PMT29EN 30 V, 6 A N-channel Trench MOSFET 3. Ordering information Table 3. Ordering information Package Name PMT29EN SC-73 Description plastic surface-mounted package with increased heatsink; 4 leads Version SOT223 Type number 4. Marking Table 4. PMT29EN Marking codes Marking code MT29EN Type number PMT29EN All i...