AO6402A

AO6402A 30V N-Channel MOSFET General Description The AO6402A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the source inductance. Product Summary VDS (V) = 30V ID = 7.5A RDS(ON) < 24mΩ RDS(ON) < 35mΩ (VGS = 10V) (VGS = 10V) (VGS = 4.5V) TSOP6 Top View Bottom View Top View D D D G 1 2 3 6 5 4 D D S G S Pin1 Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current A,F Pulsed Drain Current Power Dissipation B Maximum 30 ±20 7.5 6.0 64 2.0 1.28 -55 to 150 Units V V A VGS TA=25° C TA=70° C TA=25° C TA=70° C ID IDM PD TJ, TSTG W ° C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 48 74 54 Max 62.5 110 68 Units ° C/W ° C/W ° C/W Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO6402A Electrical Characteristics (TJ=25° C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=30V, VGS=0V C TJ=55° VDS=0V, VGS= ±20V VDS=VGS ID=250µA VGS=10V, VDS=5V VGS=10V, ID=7.5A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=5.6A Forward Transconductance Diode Forward Voltage VDS=5V, ...