Document
NX3020NAKV
29 October 2013
SO T6 6
6
30 V, 200 mA dual N-channel Trench MOSFET
Product data sheet
1. General description
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
• • • •
Very fast switching Trench MOSFET technology ESD protection Low threshold voltage
3. Applications
• • • •
Relay driver High-speed line driver Low-side loadswitch Switching circuits
4. Quick reference data
Table 1. Symbol Per transistor VDS VGS ID RDSon drain-source voltage gate-source voltage drain current VGS = 4.5 V; Tamb = 25 °C VGS = 10 V; ID = 100 mA; Tj = 25 °C
[1]
Quick reference data Parameter Conditions Tj = 25 °C Min -20 Typ Max 30 20 200 Unit V V mA
Static characteristics (per transistor) drain-source on-state resistance
[1]
2
-
2.7
4.5
Ω
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm .
Scan or click this QR code to view the latest information for this product
NXP Semiconductors
NX3020NAKV
30 V, 200 mA dual N-channel Trench MOSFET
5. Pinning information
Table 2. Pin 1 2 3 4 5 6 Pinning information Symbol Description S1 G1 D2 S2 G2 D1 source TR1 gate TR1 drain TR2 source TR2 gate TR2 drain TR1
1 2 3
Simplified outline
6 5 4
Graphic symbol
D1
D2
G1
G2
SOT666
S1
S2
017aaa256
6. Ordering information
Table 3. Ordering information Package Name NX3020NAKV SOT666 Description plastic surface-mounted package; 6 leads Version SOT666 Type number
7. Marking
Table 4. Marking codes Marking code GB Type number NX3020NAKV
8. Limiting values
Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Per transistor VDS VGS ID drain-source voltage gate-source voltage drain current VGS = 4.5 V; Tamb = 25 °C VGS = 4.5 V; Tamb = 100 °C IDM Ptot peak drain current total power dissipation Tamb = 25 °C; single pulse; tp ≤ 10 µs Tamb = 25 °C Tsp = 25 °C
NX3020NAKV All information provided in this document is subject to legal disclaimers.
Parameter
Conditions Tj = 25 °C
Min -20
[1] [1]
Max 30 20 200 120 800 260 370 1100
Unit V V mA mA mA mW mW mW
-
[2] [1]
-
© NXP N.V. 2013. All rights reserved
Product data sheet
29 October 2013
2 / 14
NXP Semiconductors
NX3020NAKV
30 V, 200 mA dual N-channel Trench MOSFET
Symbol IS Per device Ptot Tj Tamb Tstg
Parameter source current
Conditions Tamb = 25 °C Tamb = 25 °C
Min -
Max 200
Unit mA
Source-drain diode
total power dissipation junction temperature ambient temperature storage temperature
[1] [2]
[2]
-55 -55 -65
375 150 150 150
mW °C °C °C
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm . Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
017aaa001
2
120 Pder (%) 80
120 Ider (%) 80
017aaa002
40
40
0 - 75
- 25
25
75
125 175 Tamb (°C)
0 - 75
- 25
25
75
125 175 Tamb (°C)
Fig. 1.
Normalized total power dissipation as a function of ambient temperature
Fig. 2.
Normalized continuous drain current as a function of ambient temperature
NX3020NAKV
All information provided in this document is subject to legal disclaimers.
© NXP N.V. 2013. All rights reserved
Product data sheet
29 October 2013
3 / 14
NXP Semiconductors
NX3020NAKV
30 V, 200 mA dual N-channel Trench MOSFET
1 Limit RDSon = VDS/ID ID (A) 10-1 tp = 1 ms
017aaa676
tp = 10 ms tp = 100 ms
DC; Tsp = 25 °C 10-2 DC; Tamb = 25 °C; drain mounting pad 1 cm2
10-3 10-1
1
10
VDS (V)
102
IDM = single pulse Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drainsource voltage
9. Thermal characteristics
Table 6. Symbol Per transistor Rth(j-a) thermal resistance from junction to ambient thermal resistance from junction to solder point
[1] [2]
Thermal characteristics Parameter Conditions in free air
[1] [2]
Min -
Typ 410 290 -
Max 480 340 105
Unit K/W K/W K/W
Rth(j-sp)
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm .
2
NX3020NAKV
All information provided in this document is subject to legal disclaimers.
© NXP N.V. 2013. All rights reserved
Product data sheet
29 October 2013
4 / 14
NXP Semiconductors
NX3020NAKV
30 V, 200 mA dual N-channel Trench MOSFET
103 duty cycle = 1 Zth(j-a) (K/W) 0.75 0.5 0.33 102 0.2 0.1 0.05 0.02 0.01 10 10-3 0 10-2 10-1 1 10 102 0.25
017aaa677
tp (s)
103
FR4 PCB, standard footprint Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
103
017aaa678
Zth(j-a) (K/W)
duty cycle = 1 0.75 0.5
102
0.33 0.2
0.25 0.1
0.05 0.02 0 10 10-3 0.01 10-2 10-1
2
1
10
102
tp (s)
103
FR4 PCB, mounting pad for drain 1 cm Fig. 5.
Tran.