DatasheetsPDF.com

NX3020NAKV Dataheets PDF



Part Number NX3020NAKV
Manufacturers NXP
Logo NXP
Description dual N-channel Trench MOSFET
Datasheet NX3020NAKV DatasheetNX3020NAKV Datasheet (PDF)

NX3020NAKV 29 October 2013 SO T6 6 6 30 V, 200 mA dual N-channel Trench MOSFET Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • • • • Very fast switching Trench MOSFET technology ESD protection Low threshold voltage 3. Applications • • • • Relay driver High-speed line driver Low-side loadswitch .

  NX3020NAKV   NX3020NAKV


Document
NX3020NAKV 29 October 2013 SO T6 6 6 30 V, 200 mA dual N-channel Trench MOSFET Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • • • • Very fast switching Trench MOSFET technology ESD protection Low threshold voltage 3. Applications • • • • Relay driver High-speed line driver Low-side loadswitch Switching circuits 4. Quick reference data Table 1. Symbol Per transistor VDS VGS ID RDSon drain-source voltage gate-source voltage drain current VGS = 4.5 V; Tamb = 25 °C VGS = 10 V; ID = 100 mA; Tj = 25 °C [1] Quick reference data Parameter Conditions Tj = 25 °C Min -20 Typ Max 30 20 200 Unit V V mA Static characteristics (per transistor) drain-source on-state resistance [1] 2 - 2.7 4.5 Ω Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm . Scan or click this QR code to view the latest information for this product NXP Semiconductors NX3020NAKV 30 V, 200 mA dual N-channel Trench MOSFET 5. Pinning information Table 2. Pin 1 2 3 4 5 6 Pinning information Symbol Description S1 G1 D2 S2 G2 D1 source TR1 gate TR1 drain TR2 source TR2 gate TR2 drain TR1 1 2 3 Simplified outline 6 5 4 Graphic symbol D1 D2 G1 G2 SOT666 S1 S2 017aaa256 6. Ordering information Table 3. Ordering information Package Name NX3020NAKV SOT666 Description plastic surface-mounted package; 6 leads Version SOT666 Type number 7. Marking Table 4. Marking codes Marking code GB Type number NX3020NAKV 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Per transistor VDS VGS ID drain-source voltage gate-source voltage drain current VGS = 4.5 V; Tamb = 25 °C VGS = 4.5 V; Tamb = 100 °C IDM Ptot peak drain current total power dissipation Tamb = 25 °C; single pulse; tp ≤ 10 µs Tamb = 25 °C Tsp = 25 °C NX3020NAKV All information provided in this document is subject to legal disclaimers. Parameter Conditions Tj = 25 °C Min -20 [1] [1] Max 30 20 200 120 800 260 370 1100 Unit V V mA mA mA mW mW mW - [2] [1] - © NXP N.V. 2013. All rights reserved Product data sheet 29 October 2013 2 / 14 NXP Semiconductors NX3020NAKV 30 V, 200 mA dual N-channel Trench MOSFET Symbol IS Per device Ptot Tj Tamb Tstg Parameter source current Conditions Tamb = 25 °C Tamb = 25 °C Min - Max 200 Unit mA Source-drain diode total power dissipation junction temperature ambient temperature storage temperature [1] [2] [2] -55 -55 -65 375 150 150 150 mW °C °C °C Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm . Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. 017aaa001 2 120 Pder (%) 80 120 Ider (%) 80 017aaa002 40 40 0 - 75 - 25 25 75 125 175 Tamb (°C) 0 - 75 - 25 25 75 125 175 Tamb (°C) Fig. 1. Normalized total power dissipation as a function of ambient temperature Fig. 2. Normalized continuous drain current as a function of ambient temperature NX3020NAKV All information provided in this document is subject to legal disclaimers. © NXP N.V. 2013. All rights reserved Product data sheet 29 October 2013 3 / 14 NXP Semiconductors NX3020NAKV 30 V, 200 mA dual N-channel Trench MOSFET 1 Limit RDSon = VDS/ID ID (A) 10-1 tp = 1 ms 017aaa676 tp = 10 ms tp = 100 ms DC; Tsp = 25 °C 10-2 DC; Tamb = 25 °C; drain mounting pad 1 cm2 10-3 10-1 1 10 VDS (V) 102 IDM = single pulse Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drainsource voltage 9. Thermal characteristics Table 6. Symbol Per transistor Rth(j-a) thermal resistance from junction to ambient thermal resistance from junction to solder point [1] [2] Thermal characteristics Parameter Conditions in free air [1] [2] Min - Typ 410 290 - Max 480 340 105 Unit K/W K/W K/W Rth(j-sp) Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm . 2 NX3020NAKV All information provided in this document is subject to legal disclaimers. © NXP N.V. 2013. All rights reserved Product data sheet 29 October 2013 4 / 14 NXP Semiconductors NX3020NAKV 30 V, 200 mA dual N-channel Trench MOSFET 103 duty cycle = 1 Zth(j-a) (K/W) 0.75 0.5 0.33 102 0.2 0.1 0.05 0.02 0.01 10 10-3 0 10-2 10-1 1 10 102 0.25 017aaa677 tp (s) 103 FR4 PCB, standard footprint Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 103 017aaa678 Zth(j-a) (K/W) duty cycle = 1 0.75 0.5 102 0.33 0.2 0.25 0.1 0.05 0.02 0 10 10-3 0.01 10-2 10-1 2 1 10 102 tp (s) 103 FR4 PCB, mounting pad for drain 1 cm Fig. 5. Tran.


PHN210T NX3020NAKV PSMN1R1-30PL


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)