PSMN017-30PL

TO -2 20A PSMN017-30PL N-channel 30 V 17 mΩ logic level MOSFET in TO220 Rev. 2 — 3 April 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in TO220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. B 1.2 Features and benefits  High efficiency due to low switching and conduction losses  Suitable for logic level gate drive sources 1.3 Applications  DC-to-DC converters  Load switching  Motor control  Server power supplies 1.4 Quick reference data Table 1. Symbol VDS ID Ptot Tj RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation junction temperature drain-source on-state resistance VGS = 4.5 V; ID = 10 A; Tj = 25 °C; see Figure 13 VGS = 10 V; ID = 10 A; Tj = 25 °C; see Figure 13 Dynamic characteristics QGD QG(tot) gate-drain charge total gate charge VGS = 4.5 V; ID = 10 A; VDS = 15 V; see Figure 14; see Figure 15 VGS = 4.5 V; ID = 10 A; VDS = 15 V; see Figure 14; see Figure 15 VGS = 10 V; Tj(init) = 25 °C; ID = 32 A; Vsup ≤ 30 V; RGS = 50 Ω; unclamped 1.94 5.1 nC nC Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tmb = 25 °C; VGS = 10 V; see Figure 1 Tmb = 25 °C; see Figure 2 [1] Min -55 - Typ 18.7 13.4 Max 30 32 45 175 23.4 17 Unit V A W °C mΩ mΩ Static characteristics Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy 13 mJ [1] Continuous current is limited by pac...