Document
PMV37EN2
30 V, N-channel Trench MOSFET
10 January 2017
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
• Logic level compatible • Very fast switching • Trench MOSFET technology • Enhanced power dissipation capability of 1115 mW
3. Applications
• Relay driver • High-speed line driver • Low-side load switch • Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
RDSon
drain-source on-state resistance
Conditions Tj = 25 °C
VGS = 10 V; Tamb = 25 °C; t ≤ 5 s
VGS = 10 V; ID = 4.5 A; Tj = 25 °C
Min Typ Max
- - 30
-20 -
[1] -
-
20 5.6
- 31 36
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
Unit V V A
mΩ
NXP Semiconductors
PMV37EN2
30 V, N-channel Trench MOSFET
5. Pinning information
Table 2. Pinning information Pin Symbol Description 1 G gate 2 S source 3 D drain
Simplified outline
3
12
TO-236AB (SOT23)
Graphic symbol
D
G
S 017aaa253
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PMV37EN2
TO-236AB
Description plastic surface-mounted package; 3 leads
Version SOT23
7. Marking
Table 4. Marking codes Type number PMV37EN2
[1] % = placeholder for manufacturing site code
Marking code[1] %K7
PMV37EN2
Product data sheet
All information provided in this document is subject to legal disclaimers.
10 January 2017
© NXP Semiconductors N.V. 2017. All rights reserved
2 / 15
NXP Semiconductors
PMV37EN2
30 V, N-channel Trench MOSFET
8. Limiting values
Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min Max
VDS
drain-source voltage
Tj = 25 °C
- 30
VGS gate-source voltage
-20 20
ID
drain current
VGS = 10 V; Tamb = 25 °C; t ≤ 5 s
[1] -
5.6
VGS = 10 V; Tamb = 25 °C
[1] -
4.5
VGS = 10 V; Tamb = 100 °C
[1] -
2.8
IDM
peak drain current
Tamb = 25 °C; single pulse; tp ≤ 10 µs
- 16
Ptot total power dissipation Tamb = 25 °C
[2] -
510
[1] -
1115
Tsp = 25 °C
- 5000
Tj junction temperature
-55 150
Tamb
ambient temperature
-55 150
Tstg storage temperature
-65 150
Source-drain diode IS source current
Tamb = 25 °C
[1] -
1
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2. [2] Device mounted on an FR4 Printed Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
Unit V V A A A A mW mW mW °C °C °C
A
120
017aaa123
120
017aaa124
Pder (%)
Ider (%)
80 80
40 40
0 - 75
- 25
25
75 125 175 Tj (°C)
Fig. 1. Normalized total power dissipation as a function of junction temperature
0 - 75
- 25
25
75 125 175 Tj (°C)
Fig. 2. Normalized continuous drain current as a function of junction temperature
PMV37EN2
Product data sheet
All information provided in this document is subject to legal disclaimers.
10 January 2017
© NXP Semiconductors N.V. 2017. All rights reserved
3 / 15
NXP Semiconductors
PMV37EN2
30 V, N-channel Trench MOSFET
102 lD (A)
10
1
10-1
DC; Tamb = 25 °C; 6 cm2 DC; Tsp = 25 °C
aaa-013395
tp = 10 µs tp = 100 µs tp = 1 ms tp = 10 ms tp = 100 ms
10-2 10-1
1
10 102 VDS (V)
IDM = single pulse
Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drainsource voltage
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Rth(j-a)
thermal resistance from junction to ambient
Rth(j-sp)
thermal resistance from junction to solder point
Conditions in free air
in free air; t ≤ 5 s
Min Typ Max Unit
[1] -
209 246 K/W
[2] -
95 112 K/W
[2] -
63 72 K/W
- 20 25 K/W
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2.
PMV37EN2
Product data sheet
All information provided in this document is subject to legal disclaimers.
10 January 2017
© NXP Semiconductors N.V. 2017. All rights reserved
4 / 15
NXP Semiconductors
PMV37EN2
30 V, N-channel Trench MOSFET
103
Zth(j-a) (K/W)
102
duty cycle = 1
0.50 0.25
0.75
0.33 0.20
0.10 0.05
10 0.02
0.01 0
aaa-013362
1 10-3
10-2
FR4 PCB, standard footprint
10-1
1
10 102 103 tp (s)
Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
103 duty cycle = 1
aaa-013363
Zth(j-a) (K/W)
0.75 0.50 0.33
102
10 0.25 0.02 0.20 0.01 0.10
0 0.05
1 10-3
10-2
10-1
FR4 PCB, mounting pad for drain 6 cm2
1
10 102 103 tp (s)
Fig. 5. Transient thermal impedance from junction to ambient as a function of p.