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PMV37EN Dataheets PDF



Part Number PMV37EN
Manufacturers NXP
Logo NXP
Description N-channel Trench MOSFET
Datasheet PMV37EN DatasheetPMV37EN Datasheet (PDF)

PMV37EN2 30 V, N-channel Trench MOSFET 10 January 2017 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic level compatible • Very fast switching • Trench MOSFET technology • Enhanced power dissipation capability of 1115 mW 3. Applications • Relay driver • High-speed line driver • Low-side load switch • Switch.

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PMV37EN2 30 V, N-channel Trench MOSFET 10 January 2017 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic level compatible • Very fast switching • Trench MOSFET technology • Enhanced power dissipation capability of 1115 mW 3. Applications • Relay driver • High-speed line driver • Low-side load switch • Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics RDSon drain-source on-state resistance Conditions Tj = 25 °C VGS = 10 V; Tamb = 25 °C; t ≤ 5 s VGS = 10 V; ID = 4.5 A; Tj = 25 °C Min Typ Max - - 30 -20 - [1] - - 20 5.6 - 31 36 [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2. Unit V V A mΩ NXP Semiconductors PMV37EN2 30 V, N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 G gate 2 S source 3 D drain Simplified outline 3 12 TO-236AB (SOT23) Graphic symbol D G S 017aaa253 6. Ordering information Table 3. Ordering information Type number Package Name PMV37EN2 TO-236AB Description plastic surface-mounted package; 3 leads Version SOT23 7. Marking Table 4. Marking codes Type number PMV37EN2 [1] % = placeholder for manufacturing site code Marking code[1] %K7 PMV37EN2 Product data sheet All information provided in this document is subject to legal disclaimers. 10 January 2017 © NXP Semiconductors N.V. 2017. All rights reserved 2 / 15 NXP Semiconductors PMV37EN2 30 V, N-channel Trench MOSFET 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max VDS drain-source voltage Tj = 25 °C - 30 VGS gate-source voltage -20 20 ID drain current VGS = 10 V; Tamb = 25 °C; t ≤ 5 s [1] - 5.6 VGS = 10 V; Tamb = 25 °C [1] - 4.5 VGS = 10 V; Tamb = 100 °C [1] - 2.8 IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs - 16 Ptot total power dissipation Tamb = 25 °C [2] - 510 [1] - 1115 Tsp = 25 °C - 5000 Tj junction temperature -55 150 Tamb ambient temperature -55 150 Tstg storage temperature -65 150 Source-drain diode IS source current Tamb = 25 °C [1] - 1 [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2. [2] Device mounted on an FR4 Printed Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. Unit V V A A A A mW mW mW °C °C °C A 120 017aaa123 120 017aaa124 Pder (%) Ider (%) 80 80 40 40 0 - 75 - 25 25 75 125 175 Tj (°C) Fig. 1. Normalized total power dissipation as a function of junction temperature 0 - 75 - 25 25 75 125 175 Tj (°C) Fig. 2. Normalized continuous drain current as a function of junction temperature PMV37EN2 Product data sheet All information provided in this document is subject to legal disclaimers. 10 January 2017 © NXP Semiconductors N.V. 2017. All rights reserved 3 / 15 NXP Semiconductors PMV37EN2 30 V, N-channel Trench MOSFET 102 lD (A) 10 1 10-1 DC; Tamb = 25 °C; 6 cm2 DC; Tsp = 25 °C aaa-013395 tp = 10 µs tp = 100 µs tp = 1 ms tp = 10 ms tp = 100 ms 10-2 10-1 1 10 102 VDS (V) IDM = single pulse Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drainsource voltage 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Rth(j-a) thermal resistance from junction to ambient Rth(j-sp) thermal resistance from junction to solder point Conditions in free air in free air; t ≤ 5 s Min Typ Max Unit [1] - 209 246 K/W [2] - 95 112 K/W [2] - 63 72 K/W - 20 25 K/W [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2. PMV37EN2 Product data sheet All information provided in this document is subject to legal disclaimers. 10 January 2017 © NXP Semiconductors N.V. 2017. All rights reserved 4 / 15 NXP Semiconductors PMV37EN2 30 V, N-channel Trench MOSFET 103 Zth(j-a) (K/W) 102 duty cycle = 1 0.50 0.25 0.75 0.33 0.20 0.10 0.05 10 0.02 0.01 0 aaa-013362 1 10-3 10-2 FR4 PCB, standard footprint 10-1 1 10 102 103 tp (s) Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 103 duty cycle = 1 aaa-013363 Zth(j-a) (K/W) 0.75 0.50 0.33 102 10 0.25 0.02 0.20 0.01 0.10 0 0.05 1 10-3 10-2 10-1 FR4 PCB, mounting pad for drain 6 cm2 1 10 102 103 tp (s) Fig. 5. Transient thermal impedance from junction to ambient as a function of p.


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