PMV185XN

PMV185XN 3 August 2012 30 V, single N-channel Trench MOSFET Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Low RDSon Very fast switching Trench MOSFET technology 1.3 Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits 1.4 Quick reference data Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s VGS = 4.5 V; ID = 1.1 A; Tj = 25 °C [1] Conditions Tamb = 25 °C Min -12 - Typ - Max 30 12 1.2 Unit V V A Static characteristics drain-source on-state resistance [1] 2 - 185 250 mΩ Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm . Scan or click this QR code to view the latest information for this product NXP Semiconductors PMV185XN 30 V, single N-channel Trench MOSFET 2. Pinning information Table 2. Pin 1 2 3 Pinning information Symbol Description G S D gate source drain 1 2 Simplified outline 3 Graphic symbol D G S 017aaa253 TO-236AB (SOT23) 3. Ordering information Table 3. Ordering information Package Name PMV185XN TO-236AB Description plastic surface-mounted package; 3 leads Version SOT23 Type number 4. Marking Table 4. Marking codes Marking code...