NX3008NBK

SO T2 NX3008NBK 30 V, 400 mA N-channel Trench MOSFET Rev. 1 — 2 August 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 3 1.2 Features and benefits  Very fast switching  Low threshold voltage  Trench MOSFET technology  ESD protection up to 2 kV  AEC-Q101 qualified 1.3 Applications  Relay driver  High-speed line driver  Low-side loadswitch  Switching circuits 1.4 Quick reference data Table 1. Symbol VDS VGS ID Quick reference data Parameter drain-source voltage gate-source voltage drain current VGS = 4.5 V; Tamb = 25 °C VGS = 4.5 V; ID = 350 mA; Tj = 25 °C [1] Conditions Tj = 25 °C Min -8 - Typ - Max 30 8 400 Unit V V mA Static characteristics RDSon drain-source on-state resistance 1 1.4 Ω [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2. NXP Semiconductors NX3008NBK 30 V, 400 mA N-channel Trench MOSFET 2. Pinning information Table 2. Pin 1 2 3 Pinning information Symbol Description G S D gate source drain 1 2 G Simplified outline 3 Graphic symbol D SOT23 (TO-236AB) S 017aaa255 3. Ordering information Table 3. Ordering information Package Name NX3008NBK TO-236AB Description plastic surface-mounted package; 3 leads Version SOT23 Type number 4. Marking Table 4. Marking codes Marking code[1] KS% Type number NX3008NBK [1] % = p...