PSMN8R0-40BS

D2 PA K PSMN8R0-40BS N-channel 40 V 7.6 mΩ standard level MOSFET in D2PAK Rev. 2 — 2 March 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in D2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits  High efficiency due to low switching and conduction losses  Suitable for standard level gate drive sources 1.3 Applications  DC-to-DC convertors  Load switching  Motor control  Server power supplies 1.4 Quick reference data Table 1. Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation drain-source on-state resistance gate-drain charge total gate charge non-repetitive drain-source avalanche energy Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tmb = 25 °C; VGS = 10 V; see Figure 1 Tmb = 25 °C; see Figure 2 VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 13 VGS = 10 V; ID = 25 A; VDS = 20 V; see Figure 14; see Figure 15 Min Typ 6.2 Max 40 77 86 7.6 Unit V A W mΩ Static characteristics Dynamic characteristics QGD QG(tot) EDS(AL)S 3.8 21 43 nC nC mJ Avalanche ruggedness VGS = 10 V; Tj(init) = 25 °C; ID = 77 A; Vsup ≤ 40 V; unclamped; RGS = 50 Ω NXP Semiconductors PSMN8R0-40BS N-channel 40 V 7.6 mΩ standard level MOSFET in D2PAK 2. Pinning information Table 2. Pin 1 2 3 mb Pinning information Symbol Description G D S D gate drain[1] source mounting ba...