PSMN1R5-40ES

I2P AK PSMN1R5-40ES N-channel 40 V 1.6 mΩ standard level MOSFET in I2PAK. Rev. 01 — 19 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in I2PAK (SOT226) package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits „ High efficiency due to low switching and conduction losses „ Suitable for standard level gate drive sources 1.3 Applications „ DC-to-DC convertors „ Load switching „ Motor control „ Server power supplies 1.4 Quick reference data Table 1. Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation drain-source on-state resistance gate-drain charge total gate charge Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tmb = 25 °C; VGS = 10 V; see Figure 1 Tmb = 25 °C; see Figure 2 VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 13 VGS = 10 V; ID = 75 A; VDS = 20 V; see Figure 14; see Figure 15 [2] [1] Min - Typ 1.3 Max Unit 40 120 338 1.6 V A W mΩ Static characteristics Dynamic characteristics QGD QG(tot) [1] [2] - 32 136 - nC nC Continuous current is limited by package Measured 3 mm from package. NXP Semiconductors PSMN1R5-40ES N-channel 40 V 1.6 mΩ standard level MOSFET in I2PAK. 2. Pinning information Table 2. Pin 1 2 3 mb Pinning information Symbol Description G D S D gate drain source drain mbb076 Simplified outline mb Graphic symbol D G S ...