Part Number |
BUK725R0-40C |
Manufacturers |
NXP Semiconductors |
Logo |
|
Description |
N-channel TrenchMOS standard level FET |
Datasheet |
BUK725R0-40C Datasheet (PDF) |
BUK725R0-40C
N-channel TrenchMOS standard level FET
Rev. 01 — 23 March 2009 Product data sheet
1. Product profile
1.1 General description
Standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in high performance automotive applications.
1.2 Features and benefits
AEC Q101 compliant Avalanche robust Suitable for standard level gate drive Suitable for thermally demanding environment up to 175°C rating
1.3 Applications
12V Motor, lamp and solenoid loads High performance automotive power systems High performance Pulse Width Modulation (PWM) applications
1.4 Quick reference data
Table 1. VDS ID Ptot Quick reference Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; see Figure 1; see Figure 3; Tmb = 25 °C; see Figure 2 [1] Min Typ Max 40 75 157 240 Unit V A W mJ drain-source voltage drain current .