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BUK725R0-40C Dataheets PDF



Part Number BUK725R0-40C
Manufacturers NXP Semiconductors
Logo NXP Semiconductors
Description N-channel TrenchMOS standard level FET
Datasheet BUK725R0-40C DatasheetBUK725R0-40C Datasheet (PDF)

BUK725R0-40C N-channel TrenchMOS standard level FET Rev. 01 — 23 March 2009 Product data sheet 1. Product profile 1.1 General description Standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in high performance automotive applications. 1.2 Features and benefits „ AEC Q101 compliant „ Avalanche robust „ Suitable for standard.

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BUK725R0-40C N-channel TrenchMOS standard level FET Rev. 01 — 23 March 2009 Product data sheet 1. Product profile 1.1 General description Standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in high performance automotive applications. 1.2 Features and benefits „ AEC Q101 compliant „ Avalanche robust „ Suitable for standard level gate drive „ Suitable for thermally demanding environment up to 175°C rating 1.3 Applications „ 12V Motor, lamp and solenoid loads „ High performance automotive power systems „ High performance Pulse Width Modulation (PWM) applications 1.4 Quick reference data Table 1. VDS ID Ptot Quick reference Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; see Figure 1; see Figure 3; Tmb = 25 °C; see Figure 2 [1] Min Typ Max 40 75 157 240 Unit V A W mJ drain-source voltage drain current total power dissipation Symbol Parameter Avalanche ruggedness EDS(AL)S non-repetitive drain-source ID = 75 A; Vsup ≤ 40 V; RGS = 50 Ω; VGS = 10 V; avalanche energy Tj(init) = 25 °C; unclamped Dynamic characteristics QGD gate-drain charge VGS = 10 V; ID = 25 A; VDS = 32 V; Tj = 25 °C; see Figure 15 VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 12; see Figure 13 27 nC Static characteristics RDSon drain-source on-state resistance [1] - 4.1 5 mΩ Current is limited by package. NXP Semiconductors BUK725R0-40C N-channel TrenchMOS standard level FET 2. Pinning information Table 2. Pin 1 2 3 mb Pinning information Symbol G D S D Description gate drain source mounting base; connected to drain 2 1 3 mb D Simplified outline Graphic symbol G mbb076 S SOT428 (SC-63; DPAK) 3. Ordering information Table 3. Ordering information Type number Package Name Description BUK725R0-40C SC-63; plastic single-ended surface-mounted package (DPAK); 3 leads (one DPAK lead cropped) Version SOT428 BUK725R0-40C_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 23 March 2009 2 of 13 NXP Semiconductors BUK725R0-40C N-channel TrenchMOS standard level FET 4. Limiting values Table 4. Symbol VDS VDGR VGS ID Limiting values Parameter drain-source voltage drain-gate voltage gate-source voltage drain current Tmb = 25 °C; VGS = 10 V; see Figure 1; see Figure 3; Tmb = 100 °C; VGS = 10 V; see Figure 1 IDM Ptot Tstg Tj IS ISM EDS(AL)S peak drain current total power dissipation storage temperature junction temperature source current peak source current Tmb = 25 °C; tp ≤ 10 µs; pulsed; Tmb = 25 °C [2] Tmb = 25 °C; tp ≤ 10 µs; pulsed; see Figure 3 Tmb = 25 °C; see Figure 2 [1] [1] Conditions Tj ≥ 25 °C; Tj ≤ 175 °C RGS = 20 kΩ Min -20 -55 -55 Max 40 40 20 75 75 490 157 175 175 75 490 240 Unit V V V A A A W °C °C A A mJ In accordance with the Absolute Maximum Rating System (IEC 60134). Source-drain diode Avalanche ruggedness non-repetitive ID = 75 A; Vsup ≤ 40 V; RGS = 50 Ω; VGS = 10 V; drain-source avalanche Tj(init) = 25 °C; unclamped energy repetitive drain-source avalanche energy [1] [2] [3] [4] [5] EDS(AL)R see Figure 4 [3][4] [5] - - J Current is limited by package. Continuous current is limited by package. Single-pulse avalanche rating limited by maximum junction temperature of 175 °C. Repetitive avalanche rating limited by average junction temperature of 170 °C. Refer to application note AN10273 for further information. BUK725R0-40C_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 23 March 2009 3 of 13 NXP Semiconductors BUK725R0-40C N-channel TrenchMOS standard level FET ID (A) 140 120 100 003aac066 120 Pder (%) 80 03na19 80 (1) 60 40 40 20 0 0 50 100 150 Tmb (°C) 200 0 0 50 100 150 Tmb (°C) 200 Fig 1. Continuous drain current as a function of mounting base temperature Fig 2. Normalized total power dissipation as a function of mounting base temperature 003aac305 103 ID (A) 10 2 Limit RDSon = VDS / ID 10 μs 100 μs 10 DC 100 ms 1 ms 1 10 ms 10-1 10-1 1 10 VDS (V) 102 Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage BUK725R0-40C_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 23 March 2009 4 of 13 NXP Semiconductors BUK725R0-40C N-channel TrenchMOS standard level FET 102 IAL (A) 10 (2) (1) 003aac068 (3) 1 10-1 10-3 10-2 10-1 1 t (ms) 10 AL Fig 4. Single-pulse and repetitive avalanche rating; avalanche current as a function of avalanche time 5. Thermal characteristics Table 5. Symbol Rth(j-mb) Thermal characteristics Parameter Conditions Min Typ 0.65 Max 0.95 Unit K/W thermal resistance from see Figure 5 junction to mounting base thermal resistance from vertical in still air; mounted on a printed junction to ambient circuit board; minimum foot-print Rth(j-a) - 70 - K/W 1 Zth(j-mb) (K/W) 10-1 δ = 0.5 0.2 0.1 0.05 0.02 003aac067 10-2 single shot P δ= tp T tp T t 1.


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