BUK752R3-40C
N-channel TrenchMOS standard level FET
Rev. 03 — 26 January 2009 Product data sheet
1. Product profile
1.1...
BUK752R3-40C
N-channel TrenchMOS standard level FET
Rev. 03 — 26 January 2009 Product data sheet
1. Product profile
1.1 General description
Standard level gate drive N-channel enhancement mode Field-Effect
Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in high performance automotive applications.
1.2 Features and benefits
AEC Q101 compliant Avalanche robust Suitable for standard level gate drive Suitable for thermally demanding environment up to 175°C rating
1.3 Applications
12V Motor, lamp and solenoid loads High performance automotive power systems High performance Pulse Width Modulation applications
1.4 Quick reference data
Table 1. VDS ID Ptot QGD Quick reference Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; see Figure 1; see Figure 3; Tmb = 25 °C; see Figure 2 VGS = 10 V; ID = 25 A; VDS = 32 V; see Figure 15 VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 12; see Figure 13 ID = 100 A; Vsup ≤ 40 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C; unclamped Min [1] [2] Typ 67 Max 40 100 333 Unit V A W nC drain-source voltage drain current total power dissipation gate-drain charge Symbol Parameter
Dynamic characteristics
Static characteristics RDSon drain-source on-state resistance 1.96 2.3 mΩ
Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy
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Refer to document 9397 750 12572 for further inf...