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BUK765R3-40E Dataheets PDF



Part Number BUK765R3-40E
Manufacturers NXP Semiconductors
Logo NXP Semiconductors
Description N-channel TrenchMOS standard level FET
Datasheet BUK765R3-40E DatasheetBUK765R3-40E Datasheet (PDF)

BUK765R3-40E 13 July 2012 N-channel TrenchMOS standard level FET Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits • AEC Q101 compliant • Repetitive avalanche rated • Suitable for thermally demanding environments due to 175 °C rating • True standard level gat.

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BUK765R3-40E 13 July 2012 N-channel TrenchMOS standard level FET Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits • AEC Q101 compliant • Repetitive avalanche rated • Suitable for thermally demanding environments due to 175 °C rating • True standard level gate with VGS(th) rating of greater than 1V at 175 °C 1.3 Applications • 12 V Automotive systems • Motors, lamps and solenoid control • Start-Stop micro-hybrid applications • Transmission control • Ultra high performance power switching 1.4 Quick reference data Table 1. Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; Fig. 1 Tmb = 25 °C; Fig. 2 VGS = 10 V; ID = 25 A; Tj = 25 °C; Fig. 11 VGS = 10 V; ID = 25 A; VDS = 32 V; Fig. 13; Fig. 14 [1] Continuous current is limited by package. [1] Min - Typ - Max 40 75 137 Unit V A W Static characteristics drain-source on-state resistance 4.2 4.9 mΩ Dynamic characteristics QGD gate-drain charge 10.1 nC Scan or click this QR code to view the latest information for this product NXP Semiconductors BUK765R3-40E N-channel TrenchMOS standard level FET 2. Pinning information Table 2. Pin 1 2 3 mb Pinning information Symbol Description G D S D gate drain source mounting base; connected to drain 2 1 3 G mbb076 Simplified outline mb Graphic symbol D S D2PAK (SOT404) 3. Ordering information Table 3. Ordering information Package Name BUK765R3-40E D2PAK Description Version plastic single-ended surface-mounted package (D2PAK); 3 leads SOT404 (one lead cropped) Type number 4. Marking Table 4. Marking codes Marking code BUK765R3-40E Type number BUK765R3-40E 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VDGR VGS ID Parameter drain-source voltage drain-gate voltage gate-source voltage drain current Conditions Tj ≥ 25 °C; Tj ≤ 175 °C RGS = 20 kΩ Tj = 25 °C Tmb = 25 °C; VGS = 10 V; Fig. 1 Tmb = 100 °C; VGS = 10 V; Fig. 1 IDM Ptot Tstg Tj BUK765R3-40E Min -20 [1] [1] Max 40 40 20 75 75 485 137 175 175 Unit V V V A A A W °C °C 2 / 13 -55 -55 peak drain current total power dissipation storage temperature junction temperature Tmb = 25 °C; pulsed; tp ≤ 10 µs; Fig. 4 Tmb = 25 °C; Fig. 2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved Product data sheet 13 July 2012 NXP Semiconductors BUK765R3-40E N-channel TrenchMOS standard level FET Symbol IS ISM EDS(AL)S Parameter source current peak source current Conditions Tmb = 25 °C pulsed; tp ≤ 10 µs; Tmb = 25 °C ID = 75 A; Vsup ≤ 40 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C; unclamped; Fig. 3 [1] Min - Max 75 485 Unit A A Source-drain diode Avalanche ruggedness non-repetitive drain-source avalanche energy [2][3] - 131 mJ [1] [2] [3] 150 ID (A) 100 (1) Continuous current is limited by package. Single-pulse avalanche rating limited by maximum junction temperature of 175 °C. Refer to application note AN10273 for further information. 003aah150 120 Pder (%) 80 03aa16 50 40 0 0 50 100 150 Tmb (° C) 200 0 0 50 100 150 Tmb (°C) 200 (1) Capped at 75A due to package Fig. 1. Continuous drain current as a function of mounting base temperature Fig. 2. Normalized total power dissipation as a function of mounting base temperature BUK765R3-40E All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved Product data sheet 13 July 2012 3 / 13 NXP Semiconductors BUK765R3-40E N-channel TrenchMOS standard level FET 103 IAL (A) 102 003aah151 10 (1) (2) 1 (3) 10-1 10-3 10-2 10-1 1 t (ms) 10 AL Fig. 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage 103 ID (A) 102 Limit RDSon= V DS / ID 003aah152 tp =10 µ s 100 µ s 10 DC 1 ms 1 10 ms 100 ms 10-1 10-1 1 10 VDS (V) 102 Fig. 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage 6. Thermal characteristics Table 6. Symbol Rth(j-mb) Thermal characteristics Parameter thermal resistance from junction to mounting base thermal resistance from junction to ambient Conditions Fig. 5 Min Typ Max 1.09 Unit K/W Rth(j-a) minimum footprint; mounted on a printed-circuit board - 50 - K/W BUK765R3-40E All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved Product data sheet 13 July 2012 4 / 13 NXP Semiconductors BUK765R3-40E N-channel TrenchMOS standard level FET 10 Zth(j-mb) (K/W) 1 δ = 0.5 0.2 10-1 0.1 0.05 0.02 single shot 10-2 tp P 003aah153 δ= tp T t T 10 -3 10-6 10-5 10-4 1.


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