Document
BUK765R3-40E
13 July 2012
N-channel TrenchMOS standard level FET
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.
1.2 Features and benefits • AEC Q101 compliant • Repetitive avalanche rated • Suitable for thermally demanding environments due to 175 °C rating • True standard level gate with VGS(th) rating of greater than 1V at 175 °C 1.3 Applications • 12 V Automotive systems • Motors, lamps and solenoid control • Start-Stop micro-hybrid applications • Transmission control • Ultra high performance power switching 1.4 Quick reference data
Table 1. Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; Fig. 1 Tmb = 25 °C; Fig. 2 VGS = 10 V; ID = 25 A; Tj = 25 °C; Fig. 11 VGS = 10 V; ID = 25 A; VDS = 32 V; Fig. 13; Fig. 14
[1] Continuous current is limited by package. [1]
Min -
Typ -
Max 40 75 137
Unit V A W
Static characteristics drain-source on-state resistance 4.2 4.9 mΩ
Dynamic characteristics QGD gate-drain charge 10.1 nC
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NXP Semiconductors
BUK765R3-40E
N-channel TrenchMOS standard level FET
2. Pinning information
Table 2. Pin 1 2 3 mb Pinning information Symbol Description G D S D gate drain source mounting base; connected to drain
2 1 3
G
mbb076
Simplified outline
mb
Graphic symbol
D
S
D2PAK (SOT404)
3. Ordering information
Table 3. Ordering information Package Name BUK765R3-40E D2PAK Description Version plastic single-ended surface-mounted package (D2PAK); 3 leads SOT404 (one lead cropped) Type number
4. Marking
Table 4. Marking codes Marking code BUK765R3-40E Type number BUK765R3-40E
5. Limiting values
Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VDGR VGS ID Parameter drain-source voltage drain-gate voltage gate-source voltage drain current Conditions Tj ≥ 25 °C; Tj ≤ 175 °C RGS = 20 kΩ Tj = 25 °C Tmb = 25 °C; VGS = 10 V; Fig. 1 Tmb = 100 °C; VGS = 10 V; Fig. 1 IDM Ptot Tstg Tj
BUK765R3-40E
Min -20
[1] [1]
Max 40 40 20 75 75 485 137 175 175
Unit V V V A A A W °C °C
2 / 13
-55 -55
peak drain current total power dissipation storage temperature junction temperature
Tmb = 25 °C; pulsed; tp ≤ 10 µs; Fig. 4 Tmb = 25 °C; Fig. 2
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved
Product data sheet
13 July 2012
NXP Semiconductors
BUK765R3-40E
N-channel TrenchMOS standard level FET
Symbol IS ISM EDS(AL)S
Parameter source current peak source current
Conditions Tmb = 25 °C pulsed; tp ≤ 10 µs; Tmb = 25 °C ID = 75 A; Vsup ≤ 40 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C; unclamped; Fig. 3
[1]
Min -
Max 75 485
Unit A A
Source-drain diode
Avalanche ruggedness non-repetitive drain-source avalanche energy
[2][3]
-
131
mJ
[1] [2] [3]
150 ID (A) 100
(1)
Continuous current is limited by package. Single-pulse avalanche rating limited by maximum junction temperature of 175 °C. Refer to application note AN10273 for further information.
003aah150
120 Pder (%) 80
03aa16
50
40
0
0
50
100
150
Tmb (° C)
200
0
0
50
100
150
Tmb (°C)
200
(1) Capped at 75A due to package Fig. 1. Continuous drain current as a function of mounting base temperature
Fig. 2.
Normalized total power dissipation as a function of mounting base temperature
BUK765R3-40E
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved
Product data sheet
13 July 2012
3 / 13
NXP Semiconductors
BUK765R3-40E
N-channel TrenchMOS standard level FET
103 IAL (A) 102
003aah151
10
(1)
(2)
1
(3)
10-1 10-3
10-2
10-1
1 t (ms) 10 AL
Fig. 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
103 ID (A) 102 Limit RDSon= V DS / ID
003aah152
tp =10 µ s 100 µ s
10
DC 1 ms
1
10 ms 100 ms
10-1 10-1
1
10
VDS (V)
102
Fig. 4.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
6. Thermal characteristics
Table 6. Symbol Rth(j-mb) Thermal characteristics Parameter thermal resistance from junction to mounting base thermal resistance from junction to ambient Conditions Fig. 5 Min Typ Max 1.09 Unit K/W
Rth(j-a)
minimum footprint; mounted on a printed-circuit board
-
50
-
K/W
BUK765R3-40E
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved
Product data sheet
13 July 2012
4 / 13
NXP Semiconductors
BUK765R3-40E
N-channel TrenchMOS standard level FET
10 Zth(j-mb) (K/W) 1 δ = 0.5 0.2 10-1 0.1 0.05 0.02 single shot 10-2
tp P
003aah153
δ=
tp T
t T
10
-3
10-6
10-5
10-4
1.