BUK626R2-40C

DP AK BUK626R2-40C N-channel TrenchMOS intermediate level FET Rev. 1 — 12 July 2011 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits  AEC Q101 compliant  Suitable for standard and logic level gate drive sources  Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications  12 V Automotive systems  Electric and electro-hydraulic power steering  Motors, lamps and solenoid control  Start-Stop micro-hybrid applications  Transmission control  Ultra high performance power switching 1.4 Quick reference data Table 1. Symbol VDS ID Ptot Quick reference data Parameter drain-source voltage drain current total power dissipation drain-source on-state resistance Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; see Figure 1 Tmb = 25 °C; see Figure 2 [1] Min - Typ - Max Unit 40 90 128 V A W Static characteristics RDSon VGS = 10 V; ID = 15 A; Tj = 25 °C; see Figure 11 5.2 6.2 mΩ NXP Semiconductors BUK626R2-40C N-channel TrenchMOS intermediate level FET Quick reference data …continued Parameter non-repetitive drain-source avalanche energy gate-drain charge Conditions ID = 90 A; Vsup ≤ 40 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25...