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BUK6218-40C Dataheets PDF



Part Number BUK6218-40C
Manufacturers NXP Semiconductors
Logo NXP Semiconductors
Description N-channel TrenchMOS intermediate level FET
Datasheet BUK6218-40C DatasheetBUK6218-40C Datasheet (PDF)

BUK6218-40C N-channel TrenchMOS intermediate level FET Rev. 1 — 4 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits „ AEC Q101 compliant „ Suitable for standard and logic level gate drive s.

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BUK6218-40C N-channel TrenchMOS intermediate level FET Rev. 1 — 4 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits „ AEC Q101 compliant „ Suitable for standard and logic level gate drive sources „ Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications „ 12 V Automotive systems „ Electric and electro-hydraulic power steering „ Motors, lamps and solenoids „ Start-Stop micro-hybrid applications „ Transmission control „ Ultra high performance power switching 1.4 Quick reference data Table 1. Symbol VDS ID Ptot Quick reference data Parameter drain-source voltage drain current total power dissipation drain-source on-state resistance Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; see Figure 1 see Figure 2 Min Typ Max Unit 40 42 60 V A W Static characteristics RDSon VGS = 10 V; ID = 10 A; Tmb = 25 °C; see Figure 11 13.5 16 mΩ NXP Semiconductors BUK6218-40C N-channel TrenchMOS intermediate level FET Quick reference data …continued Parameter Conditions Min Typ Max Unit 25 mJ Table 1. Symbol EDS(AL)S Avalanche ruggedness non-repetitive ID = 42 A; Vsup ≤ 40 V; drain-source VGS = 10 V; Tj(init) = 25 °C; avalanche energy unclamped gate-drain charge ID = 25 A; VDS = 32 V; VGS = 10 V; see Figure 13; see Figure 14 Dynamic characteristics QGD 7.7 nC 2. Pinning information Table 2. Pin 1 2 3 mb Pinning information Symbol Description G D S D gate drain source mounting base; connected to drain 2 1 3 mb D Simplified outline Graphic symbol G mbb076 S SOT428 (DPAK) 3. Ordering information Table 3. Ordering information Package Name BUK6218-40C DPAK Description plastic single-ended surface-mounted package (DPAK); 3 leads (one lead cropped) Version SOT428 Type number BUK6218-40C All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 1 — 4 October 2010 2 of 14 NXP Semiconductors BUK6218-40C N-channel TrenchMOS intermediate level FET 4. Limiting values Table 4. Symbol VDS VGS ID IDM Ptot Tstg Tj IS ISM EDS(AL)S EDS(AL)R Limiting values Parameter drain-source voltage gate-source voltage drain current peak drain current total power dissipation storage temperature junction temperature source current peak source current non-repetitive drain-source avalanche energy repetitive drain-source avalanche energy Tmb = 25 °C tp ≤ 10 µs; pulsed; Tmb = 25 °C ID = 42 A; Vsup ≤ 40 V; VGS = 10 V; Tj(init) = 25 °C; unclamped [3][4][5] In accordance with the Absolute Maximum Rating System (IEC 60134). Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Pulsed DC Tmb = 25 °C; VGS = 10 V; see Figure 1 Tmb = 100 °C; VGS = 10 V; see Figure 1 Tmb = 25 °C; tp ≤ 10 µs; pulsed; see Figure 3 see Figure 2 [1] [2] Min -20 -16 -55 -55 - Max 40 20 16 42 30 168 60 175 175 42 168 25 - Unit V V V A A A W °C °C A A mJ J Source-drain diode Avalanche ruggedness [1] [2] [3] [4] [5] Accumulated pulse duration not to exceed 5 minutes. -16V accumulated duration not to exceed 168 hrs Single-pulse avalanche rating limited by maximum junction temperature of 175 °C. Repetitive avalanche rating limited by an average junction temperature of 170 °C. Refer to application note AN10273 for further information. BUK6218-40C All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 1 — 4 October 2010 3 of 14 NXP Semiconductors BUK6218-40C N-channel TrenchMOS intermediate level FET 60 ID (A) 40 003aae856 120 Pder (%) 80 03aa16 20 40 0 0 50 100 150 Tmb (°C) 200 0 0 50 100 150 Tmb (°C) 200 Fig 1. Continuous drain current as a function of mounting base temperature Fig 2. Normalized total power dissipation as a function of mounting base temperature 003aae846 103 ID (A) 102 Limit RDSon= V DS / ID tp =10 μ s 100 μ s DC 1 ms 10 ms 100 ms 10 1 10-1 10-1 1 10 V DS (V) 102 Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage BUK6218-40C All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 1 — 4 October 2010 4 of 14 NXP Semiconductors BUK6218-40C N-channel TrenchMOS intermediate level FET 5. Thermal characteristics Table 5. Symbol Rth(j-mb) Thermal characteristics Parameter thermal resistance from junction to mounting base Conditions see Figure 4 Min Typ Max 2.52 Unit K/W 10 Zth(j-mb) (K/W) δ = 0.5 1 0.2 0.1 0.05 10-1 0.02 P 003aae858 δ= tp T single shot tp t T 10 -2 10-6 10-5 10-4 10-3 10-2 10-1 tp (s) 1 Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse durat.


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