TO -22 0A B
BUK753R1-40B
N-channel TrenchMOS standard level FET
Rev. 3 — 8 February 2011 Product data sheet
1. Product...
TO -22 0A B
BUK753R1-40B
N-channel TrenchMOS standard level FET
Rev. 3 — 8 February 2011 Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect
Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
AEC Q101 compliant Low conduction losses due to low on-state resistance Suitable for standard level gate drive sources Suitable for thermally demanding environments due to 175 °C rating
1.3 Applications
12 V loads Automotive systems General purpose power switching Motors, lamps and solenoids
1.4 Quick reference data
Table 1. Symbol VDS ID Ptot Quick reference data Parameter drain-source voltage drain current total power dissipation drain-source on-state resistance Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; see Figure 3; see Figure 1 Tmb = 25 °C; see Figure 2
[1]
Min -
Typ -
Max Unit 40 75 300 V A W
Static characteristics RDSon VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 11; see Figure 12 2.6 3.1 mΩ
NXP Semiconductors
BUK753R1-40B
N-channel TrenchMOS standard level FET
Quick reference data …continued Parameter Conditions Min Typ Max Unit 1.6 J
Table 1. Symbol EDS(AL)S
Avalanche ruggedness non-repetitive ID = 75 A; Vsup ≤ 40 V; drain-source RGS = 50 Ω; VGS = 10 V; avalanche energy Tj(init) = 25 °C; unclamped gate-drain...