MOSFET
D2
PA K
PSMN7R6-60BS
N-channel 60 V 7.8 mΩ standard level MOSFET in D2PAK
Rev. 2 — 2 March 2012 Product data sheet
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Description
D2
PA K
PSMN7R6-60BS
N-channel 60 V 7.8 mΩ standard level MOSFET in D2PAK
Rev. 2 — 2 March 2012 Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in a D2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.
1.2 Features and benefits
High efficiency due to low switching and conduction losses Suitable for standard level gate drive sources
1.3 Applications
DC-to-DC converters Load switching Motor control Server power supplies
1.4 Quick reference data
Table 1. Symbol VDS ID Ptot Tj RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation junction temperature drain-source on-state resistance gate-drain charge total gate charge VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 13; see Figure 9 VGS = 10 V; ID = 25 A; VDS = 30 V; see Figure 15; see Figure 14 VGS = 10 V; ID = 25 A; VDS = 30 V; see Figure 14; see Figure 15 VGS = 10 V; Tj(init) = 25 °C; ID = 92 A; Vsup ≤ 100 V; RGS = 50 Ω; unclamped Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tmb = 25 °C; VGS = 10 V; see Figure 1 Tmb = 25 °C; see Figure 2 Min -55 Typ 5.9 Max 60 92 149 175 7.8 Unit V A W °C mΩ
Static characteristics
Dynamic characteristics QGD QG(tot) 10.6 38.7 nC nC
Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy 110 mJ
NXP Semiconductors
PSMN7R6-60BS
N-channel 60 V 7.8 mΩ standard level MOSFET in D2PAK
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